Facile fabrication of high-performance InGaZnO thin film transistor using hydrogen ion irradiation at room temperature

2014 ◽  
Vol 105 (16) ◽  
pp. 163505 ◽  
Author(s):  
Byung Du Ahn ◽  
Jin-Seong Park ◽  
K. B. Chung
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Thin Film Transistor ◽  
Hydrogen Ion ◽  
Facile Fabrication

High performance thin film transistor with HfSiO x dielectric fabricated at room temperature RF-magnetron sputtering

2013 ◽  
Vol 9 (4) ◽  
pp. 381-384 ◽  
Author(s):  
Dongkyu Cho ◽  
Sanghyun Woo ◽  
Jungil Yang ◽  
Donghee Lee ◽  
Yoosung Lim ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
High Performance ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Rf Magnetron Sputtering

Facile fabrication of MgZnO/ZnO composites for high performance thin film transistor

2021 ◽  
Vol 873 ◽  
pp. 159840
Author(s):  
Dewu Yue ◽  
Songbo Guo ◽  
Shun Han ◽  
Peijiang Cao ◽  
Yuxiang Zeng ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Thin Film Transistor ◽  
Facile Fabrication

Next Generation of Thin Film Transistors Based on Zinc Oxide

2004 ◽  
Vol 811 ◽  
Author(s):  
E. Fortunato ◽  
P. Barquinha ◽  
A. Pimentel ◽  
A. Gonçalves ◽  
L. Pereira ◽  
...  
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Field Effect ◽  
High Performance ◽  
Room Temperature ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Optoelectronic Device ◽  
Field Effect Mobility ◽  
Next Generation

ABSTRACTWe report high performance ZnO thin film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19 V, a field effect mobility of 28 cm2/Vs, a gate voltage swing of 1.39 V/decade and an on/off ratio of 3×105. The ZnO-TFT present an average optical transmission (including the glass substrate) of 80 % in the visible part of the spectrum. The combination of transparency, high field-effect mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of invisible and flexible electronics.

scholarly journals High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al2O3 Nanolaminate Structure Processed at Room Temperature

Materials ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 1871 ◽  
Author(s):  
Rihui Yao ◽  
Xiaoqing Li ◽  
Zeke Zheng ◽  
Xiaochen Zhang ◽  
Mei Xiong ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
High Performance ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Charge Trapping ◽  
Electrical Performance ◽  
Al2o3 Layer ◽  
X Ray ◽  
Indium Zinc Oxide

In this work, a high-performance thin film transistor with an neodymium-doped indium zinc oxide (Nd:IZO) semiconductor via a room temperature approach and adopting the Nd:IZO/Al2O3 nanolaminate structure was investigated. The effects of the ultrathin Al2O3 layer and the thickness of Nd:IZO layer in the nanolaminate structure on the improvement of electrical performance and stability of thin film transistors (TFTs) were systematically studied. Besides the carrier movement confined along the near-channel region, driven by the Al2O3 layer under an electrical field, the high performance of the TFT is also attributed to the high quality of the 8-nm-thick Nd:IZO layer and the corresponding optimal Nd:IZO/Al2O3 interface, which reduce the scattering effect and charge trapping with strong M–O bonds in bulk and the back-channel surface of Nd:IZO, according to the X-ray reflectivity (XRR), X-ray photoelectron spectroscopy (XPS), and micro-wave photo conductivity decay (μ-PCD) results. As a result, the Nd:IZO/Al2O3 TFT exhibits an outstanding performance, with a high μsat of 32.7 cm2·V−1·s−1, an Ion/Ioff of 1.9 × 108, and a low subthreshold swing (SS) value of 0.33 V·dec−1, which shows great potential for the room temperature fabrication of TFTs in high-resolution or high-frame-rate displays by a scalable, simple, and feasible approach.

High performance ZnO-thin-film transistor with Ta2O5 dielectrics fabricated at room temperature

2009 ◽  
Vol 95 (7) ◽  
pp. 072112 ◽  
Author(s):  
L. Zhang ◽  
J. Li ◽  
X. W. Zhang ◽  
X. Y. Jiang ◽  
Z. L. Zhang
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Zno Thin Film

Selenophene-containing Semiconducting Polymers for High-performance Ambipolar Thin Film Transistor Application

Polymer ◽  
2021 ◽  
pp. 123685
Author(s):  
Yanjun Guo ◽  
Mingchao Xiao ◽  
Xi Zhang ◽  
Jiayao Duan ◽  
Shengyu Cong ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Thin Film Transistor ◽  
Semiconducting Polymers
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