The photoluminescence and structural properties of (Ce, Yb) co-doped silicon oxides after high temperature annealing

2015 ◽  
Vol 117 (4) ◽  
pp. 043101 ◽  
Author(s):  
C. L. Heng ◽  
J. T. Li ◽  
W. Y. Su ◽  
P. G. Yin ◽  
T. G. Finstad
Keyword(s):  
High Temperature ◽  
Structural Properties ◽  
High Temperature Annealing ◽  
Silicon Oxides ◽  
Doped Silicon ◽  
Co Doped

scholarly journals High temperature annealing treatment on Co doped ZnO bulks

2009 ◽  
Vol 58 (5) ◽  
pp. 3274
Author(s):  
Peng Xian-De ◽  
Zhu Tao ◽  
Wang Fang-Wei
Keyword(s):  
High Temperature ◽  
Annealing Treatment ◽  
High Temperature Annealing ◽  
Doped Zno ◽  
Co Doped

Coloring Changes of Congruent LiNbO3 Crystals under Redox Annealing

2015 ◽  
Vol 230 ◽  
pp. 228-232 ◽  
Author(s):  
Dmytro Yu. Sugak
Keyword(s):  
High Temperature ◽  
Lithium Niobate ◽  
Structural Properties ◽  
High Temperature Annealing ◽  
Lithium Niobate Crystals ◽  
Congruent Lithium Niobate

The paper is to discuss the main characteristics of the influence of high temperature annealing in different gas environments on the optical and structural properties of congruent lithium niobate crystals.

Effect of High-Temperature Annealing on Phonon-Phonon Relaxation in Transmutationally-Doped Silicon Crystals

1985 ◽  
Vol 91 (1) ◽  
pp. K25-K29
Author(s):  
P. I. Baranskii ◽  
V. V. Savyak ◽  
Yu. V. Simonenko ◽  
L. A. Shcherbina
Keyword(s):  
High Temperature ◽  
High Temperature Annealing ◽  
Silicon Crystals ◽  
Doped Silicon

scholarly journals Strong near band edge emission of (Ce, Yb) co-doped ZnO thin films after high temperature annealing

2017 ◽  
Vol 7 (8) ◽  
pp. 3041 ◽  
Author(s):  
C. L. Heng ◽  
W. Xiang ◽  
W. Y. Su ◽  
H. C. Wu ◽  
Y. K. Gao ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Band Edge ◽  
Zno Thin Films ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
High Temperature Annealing ◽  
Edge Emission ◽  
Doped Zno ◽  
Co Doped

High-temperature annealing behavior of ion-implanted spinel single crystals

2004 ◽  
Vol 19 (12) ◽  
pp. 3463-3473 ◽  
Author(s):  
S.E. Enescu ◽  
L. Thomé ◽  
A. Gentils ◽  
T. Thomé
Keyword(s):  
High Temperature ◽  
Single Crystals ◽  
Structural Properties ◽  
Nuclear Waste ◽  
Annealing Temperature ◽  
High Temperature Annealing ◽  
Annealing Behavior ◽  
Lattice Disorder ◽  
Cs Ions ◽  
Composition Changes

This paper reports modifications of the chemical and structural properties of MgAl2O4 single crystals implanted with Cs ions and submitted to high-temperature annealing. The composition changes, the damage created in the three sublattices (Al, Mg and O) of the crystals, and the behavior of implanted ions were studied by Rutherford backscattering and channeling experiments as a function of the Cs fluence and annealing temperature. The data show that annealing above 700–800 °C induces a huge modification of the stoichiometry of the material, a decrease of the lattice disorder, and an increase of the fraction of Cs atoms located in substitutional lattice sites. These results have to be taken into account for the future use of spinel as a matrix for the transmutation of nuclear waste.

Structural properties of Si nanoclusters produced by thermal annealing of SiOx films

2004 ◽  
Vol 817 ◽  
Author(s):  
Simona Boninelli ◽  
Fabio Iacona ◽  
Corrado Bongiorno ◽  
Corrado Spinella ◽  
Francesco Priolo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Annealing Temperature ◽  
Quantitative Description ◽  
Dark Field ◽  
High Temperature Annealing ◽  
Transmission Electron

AbstractThe structural properties of Si nanoclusters embedded in SiO2, produced by high temperature annealing of SiOx films, have been investigated by energy filtered transmission electron microscopy. The presence of amorphous nanostructures, not detectable by using dark field transmission electron microscopy, has been demonstrated. By taking into account also this contribution, a quantitative description of the evolution of the samples upon thermal annealing has been accomplished. In particular, the nanocluster mean radius and the density of amorphous and crystalline clusters have been determined as a function of the annealing temperature.

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