Performance stability and functional reliability in bipolar resistive switching of bilayer ceria based resistive random access memory devices

2015 ◽  
Vol 117 (8) ◽  
pp. 084502 ◽  
Author(s):  
Muhammad Ismail ◽  
Ijaz Talib ◽  
Anwar Manzoor Rana ◽  
Ejaz Ahmed ◽  
Muhammad Younus Nadeem
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Bipolar Resistive Switching ◽  
Functional Reliability

Sol-Gel Processed ZrO2 Based Forming-Free Resistive Switching Memory Devices

2022 ◽  
Vol 1048 ◽  
pp. 198-202
Author(s):  
K.M. Shafi ◽  
K. Muhammed Shibu ◽  
N.K. Sulfikarali ◽  
K.P. Biju
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Sol Gel ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Bipolar Resistive Switching ◽  
Switching Behaviour

In this work, we fabricated ZrO2 based resistive random access memory by sol-gel spin coating technique and investigated its structural, optical and resistive switching properties. The X-ray diffraction pattern revealed that 400 °C annealed ZrO2 thin film has tetragonal structure. The optical band gap value of ZrO2 thin film obtained was 5.51 eV. The resistive switching behaviour of W/ZrO2/ITO capacitor like structure was studied. It was found that no initial electroforming process required for the device. The fabricated devices show a self-compliance bipolar resistive switching behaviour and have high on off ratio (>102). Our result suggests that solution processed ZrO2 has great potential to develop transparent and flexible resistive random access memory devices.

scholarly journals A comprehensive investigation of MoO3 based resistive random access memory

RSC Advances ◽  
2020 ◽  
Vol 10 (33) ◽  
pp. 19337-19345 ◽  
Author(s):  
Jameela Fatheema ◽  
Tauseef Shahid ◽  
Mohammad Ali Mohammad ◽  
Amjad Islam ◽  
Fouzia Malik ◽  
...  
Keyword(s):  
Molybdenum Oxide ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Comprehensive Investigation ◽  
Bipolar Resistive Switching

The bipolar resistive switching of molybdenum oxide is deliberated while molybdenum and nickel are used as bottom and top electrodes, respectively, to present a device with resistive random access memory (RRAM) characteristics.

Bipolar resistive switching of chromium oxide for resistive random access memory

2011 ◽  
Vol 62 (1) ◽  
pp. 40-43 ◽  
Author(s):  
Shih-Cheng Chen ◽  
Ting-Chang Chang ◽  
Shih-Yang Chen ◽  
Chi-Wen Chen ◽  
Shih-Ching Chen ◽  
...  
Keyword(s):  
Chromium Oxide ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Bipolar Resistive Switching

scholarly journals Resistive switching of the HfOx/HfO2 bilayer heterostructure and its transmission characteristics as a synapse

RSC Advances ◽  
2018 ◽  
Vol 8 (73) ◽  
pp. 41884-41891 ◽  
Author(s):  
Tingting Tan ◽  
Yihang Du ◽  
Ai Cao ◽  
Yaling Sun ◽  
Hua Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Bilayer Structure ◽  
Transmission Characteristics ◽  
Access Memory ◽  
Switching Characteristics

In this work, HfOx/HfO2 homo-bilayer structure based resistive random access memory devices were fabricated, and the resistive switching characteristics of the devices were investigated.

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