scholarly journals Characterization of zero-bias microwave diode power detectors at cryogenic temperature

2016 ◽  
Vol 87 (8) ◽  
pp. 084702 ◽  
Author(s):  
Vincent Giordano ◽  
Christophe Fluhr ◽  
Benoît Dubois ◽  
Enrico Rubiola
Keyword(s):  
Cryogenic Temperature ◽  
Zero Bias ◽  
Microwave Diode

Investigation of carrier transport mechanisms in the Cu–Zn–Se based hetero-structure grown by sputtering technique

2018 ◽  
Vol 96 (7) ◽  
pp. 816-825 ◽  
Author(s):  
H.H. Güllü ◽  
M. Terlemezoğlu ◽  
Ö. Bayraklı ◽  
D.E. Yıldız ◽  
M. Parlak
Keyword(s):  
Barrier Height ◽  
Carrier Transport ◽  
Thermionic Emission ◽  
Electrical Characterization ◽  
Band Gap Energy ◽  
Zero Bias ◽  
Hetero Structure ◽  
Current Voltage ◽  
P Type

In this paper, we present results of the electrical characterization of n-Si/p-Cu–Zn–Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred orientation. The band gap energy for direct optical transitions was obtained as 2.65 eV. The results of the conductivity measurements indicated p-type behavior and carrier transport mechanism was modelled according to thermionic emission theory. Detailed electrical characterization of this structure was carried out with the help of temperature-dependent current–voltage measurements in the temperature range of 220–360 K, room temperature, and frequency-dependent capacitance–voltage and conductance-voltage measurements. The anomaly in current–voltage characteristics was related to barrier height inhomogeneity at the interface and modified by the assumption of Gaussian distribution of barrier height, in which mean barrier height and standard deviation at zero bias were found as 2.11 and 0.24 eV, respectively. Moreover, Richardson constant value was determined as 141.95 Acm−2K−2 by means of modified Richardson plot.

Electrical Characterization of In Schottky Contacts to Epitaxial n-In0.46Ga0.54P Grown on n+-GaAs by Mocvd

1996 ◽  
Vol 448 ◽  
Author(s):  
N. Marcano ◽  
A. Singh
Keyword(s):  
Barrier Height ◽  
Thermionic Emission ◽  
Electrical Characterization ◽  
Interface Layer ◽  
Zero Bias ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Direct Current Voltage ◽  
Etched Surface

AbstractIn/n-In0.46Ga0.54P Schottky diode was fabricated by thermal evaporation of In on chemically etched surface of In0.45Ga0.54P:Si epitaxial layer grown on highly doped n type GaAs. The In metal formed a high quality rectifying contact to In0.46Ga0.54P:Si with a rectification ratio of 500. The direct current-voltage/temperature (I-V/T) characteristics were non-ideal with the values of the ideality factor (n) between 1.26-1.78 for 400>T>260 K. The forward I-V data strongly indicated that the current was controlled by the generation-recombination (GR) and thermionic emission (TE) mechanisms for temperature in the range 260-400 K. From the temperature variation of the TE reverse saturation current, the values of (0.75±0.05)V and the (4.5±0.5)×10-5 Acm-2K-2 for the zero bias zero temperature barrier height (φoo) and modified effective Richardson constant were obtained. The 1 MHz capacitance-voltage (C-V) data for 260 K < T < 400 K was analyzed in terms of the C-2-V relation including the effect of interface layer to obtain more realistic values of the barrier height (φbo). The temperature dependence of φbo was described the relation φbo =(0.86±10.03) - (8.4±0.7)×l0-4T. The values of φoo, obtained by the I-V and C-V techniques agreed well.

Electromechanical and Thermal Characterization of Stacked Bi-2223 Tapes at Cryogenic Temperature

2009 ◽  
Vol 19 (3) ◽  
pp. 2893-2896 ◽  
Author(s):  
P. Keller ◽  
M. Schwarz ◽  
K.-P. Weiss ◽  
R. Heller ◽  
A. Jung ◽  
...  
Keyword(s):  
Cryogenic Temperature ◽  
Thermal Characterization

Electrochemical Characterization of TiO2 Nanotubular Films Exposed in an Aqueous Solution with a pH = 3.2

MRS Advances ◽  
2017 ◽  
Vol 2 (49) ◽  
pp. 2721-2728 ◽  
Author(s):  
S. Mejía Sintillo ◽  
C. Cuevas Arteaga ◽  
R. Ma. Melgoza Alemán ◽  
P. Mijaylova Nacheva
Keyword(s):  
Morphological Characterization ◽  
Electrochemical Stability ◽  
Water Remediation ◽  
Solution Ph ◽  
Zero Bias ◽  
Linear Polarization Resistance ◽  
Uv Lamp ◽  
Acid Waters ◽  
Acidic Wastewater

ABSTRACTTiO2 nanotubular structures were fabricated on Ti polished and unpolished foils exposed to H2O-Glycerol (50-50Vol.%)+0.27 M NH4F at 20V. The obtained TiO2 nanostructures were analyzed by SEM obtaining the morphological characterization, from which the roughness factors were calculated. Crystalline phases of both TiO2 nanotubular films were obtained by XRD after annealing at 450 °C and 600 °C for 2 h. The electrochemical stability of the TiO2 nanotubular films was obtained from the potentiodynamic polarization curves (PC) and the linear polarization resistance (Lpr) techniques, exposing the samples in 1M Na2SO4 + H2SO4 solution (pH = 3.2), such pH is in accordance with the acidic wastewater containing sulfur compounds coming from the industries or acid waters of the aquifers, which have been contaminated from the volcanoes nearby. It was concluded that the electrochemical stability of the crystallized nanotubular films is improved with the increase of the annealing temperature of the amorphous TiO2 arrays, which is associated to the higher composition of anatase and rutile, observing that the major amount of rutile improved the corrosion performance. The photoelectrochemical measurements were carried out in 0.5 M Na2SO4 solution using an 8 W UV lamp at a λ= 365 nm, whose results were recorded at zero bias during 10 min under darkness and illumination intervals of 1 min each. The obtained results were in agreement with the necessary features for being used in photocatalytic water remediation.

Characterization of spectral hole depth in Tm3+:YAG within the cryogenic temperature range

2013 ◽  
Vol 22 (6) ◽  
pp. 064213 ◽  
Author(s):  
Lei Chen ◽  
Xiu-Rong Ma ◽  
Wei Wang ◽  
Shuang-Gen Zhang ◽  
Kuan-Lin Mu ◽  
...  
Keyword(s):  
Cryogenic Temperature ◽  
Hole Depth ◽  
Temperature Range ◽  
Spectral Hole

Preparation and Characterization of N-CdS Thin Films and its Schottky Barrier

2013 ◽  
Vol 665 ◽  
pp. 307-310
Author(s):  
K.D. Patel ◽  
Keyur S. Hingarajiya ◽  
Mayur M. Patel ◽  
V.M. Pathak ◽  
R. Srivastava
Keyword(s):  
Thin Films ◽  
Barrier Height ◽  
Thermionic Emission ◽  
Cadmium Sulphide ◽  
Optical Characterization ◽  
Point Of View ◽  
Flat Band ◽  
Zero Bias ◽  
Cds Thin Films

Cadmium sulphide (CdS), a member of group II-VI semiconductors is one of the promising materials from its applications point of view. The present investigations are about the preparation, structural and optical characterization of CdS thin films and their use as Schottky diode with Aluminum. Thin films of CdS having thickness around 700nm have been deposited by thermal evaporation. The chemical composition of the deposited CdS thin films has been made using EDAX technique. The structural characterization of this films was carried out using XRD. The structure of CdS after the deposition was found to be Cubic. Also, the lattice parameters were evaluated from the XRD data. From TEM of CdS thin films, the polycrystalline nature was confirmed. Optical characterization has been carried out using UV-VIS-IR spectroscopy. The direct as well as indirect band gaps obtained are 1.64eV and 1.48eV respectively. Schottky junctions were formed by a thermal vapor-deposition of 500nm Al films on pre-coated CdS glass substrates. Diode parameters, such as the zero bias barrier height φb0, the flat band barrier height φbf and the ideality factorη, were calculated using thermionic emission theory at room temperature.

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