Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si

2018 ◽  
Vol 112 (15) ◽  
pp. 153507 ◽  
Author(s):  
Daehwan Jung ◽  
Robert Herrick ◽  
Justin Norman ◽  
Katherine Turnlund ◽  
Catherine Jan ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Quantum Dot ◽  
Threading Dislocation ◽  
Quantum Dot Lasers ◽  
Threading Dislocation Density ◽  
Inas Quantum Dot

Impact of dislocation density on performance and reliability of 1.3 μm InAs quantum dot lasers epitaxially grown on silicon

2021 ◽  
Author(s):  
Matteo Buffolo ◽  
Lorenzo Rovere ◽  
Carlo De Santi ◽  
Justin Norman ◽  
John E. Bowers ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Inas Quantum Dot

High-Irradiance Degradation Studies of Metamorphic 1eV GaInAs Solar Cells

2012 ◽  
Vol 1432 ◽  
Author(s):  
Ryan M. France ◽  
Myles A. Steiner
Keyword(s):  
Solar Cells ◽  
Active Region ◽  
Dislocation Density ◽  
Dark Current ◽  
Degradation Mechanism ◽  
Control Cell ◽  
High Irradiance ◽  
Threading Dislocation ◽  
Threading Dislocation Density ◽  
Degradation Studies

ABSTRACTInitial tests are performed regarding the degradation of lattice-mismatched GaInAs solar cells. 1eV metamorphic GaInAs solar cells with 1-2×106 cm-2 threading dislocation density in the active region are irradiated with an 808 nm laser for 2 weeks time under a variety of temperature and illumination conditions. All devices show a small degradation in Voc that is logarithmic with time. The absolute loss in performance after 2 weeks illuminated at 1300 suns equivalent and 125°C is 7 mV Voc and 0.2% efficiency, showing these devices to be relatively stable. The dark current increases with time and is analyzed with a two-diode model. A GaAs control cell degrades at the same rate, suggesting that the observed degradation mechanism is not related to the additional dislocations in the GaInAs devices.

High performance and reliable 1.3 μm InAs quantum dot lasers epitaxially grown on Si

2018 ◽  
Author(s):  
Daehwan Jung ◽  
Robert Herrick ◽  
Justin Norman ◽  
Yating Wan ◽  
Arthur C. Gossard ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Quantum Dot Lasers ◽  
Inas Quantum Dot

Relationship between misfit-dislocation formation and initial threading-dislocation density in GaInN/GaN heterostructures

2015 ◽  
Vol 54 (11) ◽  
pp. 115501 ◽  
Author(s):  
Motoaki Iwaya ◽  
Taiji Yamamoto ◽  
Daisuke Iida ◽  
Yasunari Kondo ◽  
Mihoko Sowa ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Misfit Dislocation ◽  
Threading Dislocation ◽  
Threading Dislocation Density ◽  
Dislocation Formation

Enhanced reduction in threading dislocation density in Ge grown on porous silicon during annealing due to porous buffer reconstruction

2015 ◽  
Vol 213 (1) ◽  
pp. 96-101
Author(s):  
G. Calabrese ◽  
S. Baricordi ◽  
P. Bernardoni ◽  
D. De Salvador ◽  
M. Ferroni ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Threading Dislocation Density

Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

1995 ◽  
Vol 378 ◽  
Author(s):  
G. Kissinger ◽  
T. Morgenstern ◽  
G. Morgenstern ◽  
H. B. Erzgräber ◽  
H. Richter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Threading Dislocation Density

AbstractStepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.

High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

2015 ◽  
Vol 107 (26) ◽  
pp. 261107 ◽  
Author(s):  
Zihao Wang ◽  
Ruizhe Yao ◽  
Stefan F. Preble ◽  
Chi-Sen Lee ◽  
Luke F. Lester ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Wafer Bonding ◽  
High Performance ◽  
Silicon Substrates ◽  
Quantum Dot Lasers ◽  
Gaas Wafer ◽  
Inas Quantum Dot

Band filling in p-doped InAs quantum dot lasers

2011 ◽  
Author(s):  
M. Hutchings ◽  
I. O’Driscoll ◽  
P. M. Smowton ◽  
P. Blood
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Band Filling ◽  
Inas Quantum Dot

A surfactant-mediated relaxed Si0.5Ge0.5 graded layer with a very low threading dislocation density and smooth surface

1999 ◽  
Vol 75 (11) ◽  
pp. 1586-1588 ◽  
Author(s):  
J. L. Liu ◽  
C. D. Moore ◽  
G. D. U’Ren ◽  
Y. H. Luo ◽  
Y. Lu ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Smooth Surface ◽  
Threading Dislocation ◽  
Threading Dislocation Density
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