Theoretical investigation of the Ag filament morphology in conductive bridge random access memories

2018 ◽  
Vol 124 (15) ◽  
pp. 152125 ◽  
Author(s):  
Kan-Hao Xue ◽  
Yun Li ◽  
Hai-Lei Su ◽  
Jun-Hui Yuan ◽  
Yi Li ◽  
...  
Keyword(s):  
Theoretical Investigation ◽  
Random Access ◽  
Conductive Bridge ◽  
Ag Filament

scholarly journals Publisher's Note: “Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure” [Appl. Phys. Lett. 105, 193501 (2014)]

2015 ◽  
Vol 106 (15) ◽  
pp. 159901
Author(s):  
Meiyun Zhang ◽  
Shibing Long ◽  
Guoming Wang ◽  
Xiaoxin Xu ◽  
Yang Li ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Access Memory ◽  
Conductive Bridge

Superior Retention of Low-Resistance State in Conductive Bridge Random Access Memory With Single Filament Formation

2015 ◽  
Vol 36 (2) ◽  
pp. 129-131 ◽  
Author(s):  
Xiaoxin Xu ◽  
Hangbing Lv ◽  
Hongtao Liu ◽  
Tiancheng Gong ◽  
Guoming Wang ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Filament Formation ◽  
Access Memory ◽  
Single Filament ◽  
Low Resistance ◽  
Conductive Bridge ◽  
Resistance State

scholarly journals Oxide-Electrolyte Thickness Dependence Diode-Like Threshold Switching and High on/off Ratio Characteristics by Using Al2O3 Based CBRAM

Electronics ◽  
2020 ◽  
Vol 9 (7) ◽  
pp. 1106 ◽  
Author(s):  
Asim Senapati ◽  
Sourav Roy ◽  
Yu-Feng Lin ◽  
Mrinmoy Dutta ◽  
Siddheswar Maikap
Keyword(s):  
Random Access ◽  
Low Frequency ◽  
Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Ion Migration ◽  
Threshold Switching ◽  
Conductive Bridge ◽  
20 Nm ◽  
Superior Memory ◽  
Oxide Electrolyte

Diode-like threshold switching and high on/off ratio characteristics by using an Al/Ag/Al2O3/TiN conductive bridge resistive random access memories (CBRAM) have been obtained. The 5 nm-thick Al2O3 device shows superior memory parameters such as low forming voltage and higher switching uniformity as compared to the 20 nm-thick switching layer, owing to higher electric field across the material. Capacitance-voltage (CV) characteristics are observed for the Ag/Al2O3/TiN devices, suggesting the unipolar/bipolar resistive switching phenomena. Negative capacitance (NC) at low frequency proves inductive behavior of the CBRAM devices due to Ag ion migration into the Al2O3 oxide-electrolyte. Thicker Al2O3 film shows diode-like threshold switching behavior with long consecutive 10,000 cycles. It has been found that a thinner Al2O3 device has a larger on/off ratio of >108 as compared to a thicker one. Program/erase (P/E) cycles, read endurance, and data retention of the thinner Al2O3 oxide-electrolyte shows superior phenomena than the thicker electrolyte. The switching mechanism is also explored.

An electroforming-free mechanism for Cu2O solid-electrolyte-based conductive-bridge random access memory (CBRAM)

2020 ◽  
Vol 8 (24) ◽  
pp. 8125-8134
Author(s):  
Ki-Hyun Kwon ◽  
Dong-Won Kim ◽  
Hea-Jee Kim ◽  
Soo-Min Jin ◽  
Dae-Seong Woo ◽  
...  
Keyword(s):  
Solid Electrolyte ◽  
Annealing Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Ex Situ ◽  
Access Memory ◽  
Conductive Bridge

In a CuxO solid-electrolyte-based CBRAM cell using an Ag top electrode, electroforming-free and electro-reset processes could be achieved at a specific ex situ annealing temperature of the solid electrolyte.

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