Observation of Si(111) surface topography changes during Si molecular beam epitaxial growth using microprobe reflection high‐energy electron diffraction

Applied Physics Letters ◽

10.1063/1.97942 ◽

1987 ◽

Vol 50 (17) ◽

pp. 1141-1143 ◽

Author(s):

M. Ichikawa ◽

T. Doi

Keyword(s):

Electron Diffraction ◽

Surface Topography ◽

Epitaxial Growth ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Measurement of reflection high-energy electron diffraction oscillations during molecular-beam epitaxial growth of GaAs on a rotating substrate

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586241 ◽

1992 ◽

Vol 10 (4) ◽

pp. 1784 ◽

Author(s):

G. W. Turner

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Surface reconstructions of Si(001) observed using reflection‐high‐ energy‐electron diffraction during molecular‐beam epitaxial growth from disilane

Applied Physics Letters ◽

10.1063/1.105694 ◽

1991 ◽

Vol 59 (26) ◽

pp. 3419-3421 ◽

Author(s):

S. M. Mokler ◽

W. K. Liu ◽

N. Ohtani ◽

B. A. Joyce

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Molecular Beam Epitaxial ◽

Surface Reconstructions ◽

Molecular Beam Epitaxial Growth

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Dynamics of reflection high‐energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on (111)BGaAs substrates

Applied Physics Letters ◽

10.1063/1.102878 ◽

1990 ◽

Vol 56 (25) ◽

pp. 2533-2535 ◽

Author(s):

M. Y. Yen ◽

T. W. Haas

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Diffraction Intensity ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Reflection high‐energy electron diffraction studies on the molecular‐beam‐epitaxial growth of AISb, GaSb, InAs, InAsSb, and GaInAsSb on GaSb

Journal of Applied Physics ◽

10.1063/1.335362 ◽

1985 ◽

Vol 57 (10) ◽

pp. 4572-4577 ◽

Author(s):

T. H. Chiu ◽

W. T. Tsang

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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In situ scanning microprobe reflection high-energy electron diffraction observation of GaAs surfaces during molecular-beam epitaxial growth

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584631 ◽

1989 ◽

Vol 7 (4) ◽

pp. 714 ◽

Author(s):

Toshiro Isu

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Reflection high‐energy electron diffraction study of the molecular beam epitaxial growth of CaF2 on Si(110)

Applied Physics Letters ◽

10.1063/1.115060 ◽

1995 ◽

Vol 67 (12) ◽

pp. 1695-1697 ◽

Author(s):

W. K. Liu ◽

X. M. Fang ◽

P. J. McCann

Keyword(s):

Electron Diffraction ◽

Diffraction Study ◽

Epitaxial Growth ◽

Molecular Beam ◽

Electron Diffraction Study ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Reflection high energy electron diffraction studies on SixSnyGe1−x−y on Si(100) molecular beam epitaxial growth

Thin Solid Films ◽

10.1016/j.tsf.2013.11.128 ◽

2014 ◽

Vol 557 ◽

pp. 188-191 ◽

Author(s):

A.I. Nikiforov ◽

V.I. Mashanov ◽

V.A. Timofeev ◽

O.P. Pchelyakov ◽

H.-H. Cheng

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Growth model for the molecular beam epitaxial growth of CdTe using reflection high energy electron diffraction oscillation measurements

Journal of Crystal Growth ◽

10.1016/0022-0248(95)00288-x ◽

1995 ◽

Vol 156 (3) ◽

pp. 206-211 ◽

Author(s):

T Behr ◽

T Litz ◽

A Waag ◽

G Landwehr

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Growth Model ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Frequency analysis of reflection high‐energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on nominally oriented (111)B substrates

Applied Physics Letters ◽

10.1063/1.114029 ◽

1995 ◽

Vol 66 (5) ◽

pp. 610-612 ◽

Author(s):

B. J. Garcia ◽

C. Fontaine ◽

A. Muñoz‐Yagüe

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Frequency Analysis ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Diffraction Intensity ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Improvement of GaAs/AlGaAs molecular beam epitaxial growth by a flux‐interruption‐and‐annealing method using phase‐locked reflection high‐energy electron diffraction oscillation

Journal of Applied Physics ◽

10.1063/1.351058 ◽

1992 ◽

Vol 71 (6) ◽

pp. 2632-2635 ◽

Author(s):

Kun‐Jing Lee ◽

Yu‐Jeng Chang ◽

Joseph Ya‐min Lee ◽

Feng‐Yuh Juang

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth ◽

Annealing Method

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