Epitaxial growth of Al(111)/Si(111) films using partially ionized beam deposition

1987 ◽  
Vol 51 (24) ◽  
pp. 1992-1994 ◽  
Author(s):  
C.‐H. Choi ◽  
R. A. Harper ◽  
A. S. Yapsir ◽  
T.‐M. Lu
Keyword(s):  
Epitaxial Growth ◽  
Partially Ionized ◽  
Beam Deposition

Low‐temperature epitaxial growth of CoGe2(001)/GaAs(100) films using the partially ionized beam deposition technique

1996 ◽  
Vol 68 (13) ◽  
pp. 1817-1819 ◽  
Author(s):  
K. E. Mello ◽  
S. R. Soss ◽  
S. P. Murarka ◽  
T.‐M. Lu ◽  
S. L. Lee
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Deposition Technique ◽  
Partially Ionized ◽  
Beam Deposition

Room-temperature epitaxy of Cu on Si(111) using partially ionized beam deposition

1990 ◽  
Vol 5 (5) ◽  
pp. 989-997 ◽  
Author(s):  
P. Bai ◽  
G-R. Yang ◽  
L. You ◽  
T-M. Lu ◽  
D.B. Knorr
Keyword(s):  
Epitaxial Growth ◽  
Room Temperature ◽  
Intermediate Phase ◽  
X Ray Diffraction ◽  
Lattice Matching ◽  
Partially Ionized ◽  
Simple Picture ◽  
Matching Concept ◽  
Beam Deposition

The epitaxial growth of Cu on Si(111) substrate at room temperature was achieved using the Partially Ionized Beam (PIB) deposition technique in a conventional (10−4 Pa) vacuum without prior in situ cleaning of the substrate or post-annealing of the film. The beam contained ≍2% of Cu self-ions, and a bias of 0 to 4.2 kV was applied to the substrate during deposition. X-ray diffraction studies showed the existence of a twin structure in the epitaxial Cu layer deposited at 1 kV. A mechanism of epitaxial growth of Cu(111) on Si(111) substrate via an η″—Cu3Si intermediate phase is proposed. Based on the crystal structure of η″—Cu3Si, it is demonstrated that the geometrical lattice matching concept provides a simple picture of lattice continuity at the interface in this epitaxial system.

Study of interface impurity sputtering in partially ionized beam deposition of Cu on Si

1990 ◽  
Vol 68 (7) ◽  
pp. 3619-3624 ◽  
Author(s):  
P. Bai ◽  
G.‐R. Yang ◽  
T.‐M. Lu
Keyword(s):  
Partially Ionized ◽  
Beam Deposition

Partially ionized beam deposition of 2‐methyl‐4‐nitroaniline thin films

1991 ◽  
Vol 70 (11) ◽  
pp. 6766-6773 ◽  
Author(s):  
T. C. Nason ◽  
J. F. McDonald ◽  
T.‐M. Lu
Keyword(s):  
Thin Films ◽  
Partially Ionized ◽  
Beam Deposition

Epitaxial growth of ZnS on GaP by molecular beam deposition

1994 ◽  
Vol 138 (1-4) ◽  
pp. 145-149 ◽  
Author(s):  
H. Kanie ◽  
H. Araki ◽  
K. Ishizaka ◽  
H. Ohta ◽  
S. Murakami
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Deposition ◽  
Beam Deposition

Effect of Partially-Ionized Vapor on Epitaxial Growth of Te Thin Films

1982 ◽  
Vol 21 (Part 1, No. 9) ◽  
pp. 1384-1384 ◽  
Author(s):  
Katsuro Okuyama ◽  
Yasuji Kumagai
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Partially Ionized

Metal/polymer interface adhesion by partially ionized beam deposition

1996 ◽  
Vol 80 (10) ◽  
pp. 5759-5764 ◽  
Author(s):  
P. K. Wu ◽  
S. Dabral ◽  
G.‐R. Yang ◽  
B. Gittleman ◽  
C. Li ◽  
...  
Keyword(s):  
Interface Adhesion ◽  
Polymer Interface ◽  
Partially Ionized ◽  
Metal Polymer ◽  
Beam Deposition
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