Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors
1982 ◽
Vol 129
(4)
◽
pp. 730-738
◽
1992 ◽
Vol 39
(1)
◽
pp. 184-192
◽
2010 ◽
Vol 31
(4)
◽
pp. 305-307
◽
Design of a β-Ga2O3 Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown
2020 ◽
Vol 67
(11)
◽
pp. 4842-4848