Parametric layout cell design of N-MOS transistor with enhanced radiation hardened properties

2020 ◽  
Author(s):  
A. R. Serazetdinov ◽  
E. V. Atkin ◽  
K. O. Khokhlov
Keyword(s):  
Cell Design ◽  
Mos Transistor ◽  
Radiation Hardened ◽  
Hardened Properties

A highly reliable radiation hardened 8T SRAM cell design

2021 ◽  
Vol 125 ◽  
pp. 114376
Author(s):  
Yinghuan Lv ◽  
Qing Wang ◽  
Hao Ge ◽  
Tiantian Xie ◽  
Jing Chen
Keyword(s):  
Cell Design ◽  
Sram Cell ◽  
Radiation Hardened

scholarly journals A novel highly reliable and low-power radiation hardened SRAM bit-cell design

2018 ◽  
Vol 15 (3) ◽  
pp. 20171129-20171129 ◽  
Author(s):  
Dianpeng Lin ◽  
Yiran Xu ◽  
Xiaonian Liu ◽  
Wenyi Zhu ◽  
Lihua Dai ◽  
...  
Keyword(s):  
Low Power ◽  
Cell Design ◽  
Radiation Hardened ◽  
Power Radiation

Contrast and Resolution in Alfresco Microscopy and Thick Specimens

1972 ◽  
Vol 30 ◽  
pp. 570-571
Author(s):  
J. R. Sellar ◽  
J. M. Cowley
Keyword(s):  
Solid Material ◽  
Cell Design ◽  
Current Interest ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
Transmission Electron ◽  
Environmental Cell ◽  
Scanning Transmission ◽  
Conventional Transmission Electron Microscope ◽  
Transmission Microscope

Current interest in high voltage electron microscopy, especially in the scanning mode, has prompted the development of a method for determining the contrast and resolution of images of specimens in controlled-atmosphere stages or open to the air, hydrated biological specimens being a good example. Such a method would be of use in the prediction of microscope performance and in the subsequent optimization of environmental cell design for given circumstances of accelerating voltage, cell gas pressure and constitution, and desired resolution.Fig. 1 depicts the alfresco cell of a focussed scanning transmission microscope with a layer of gas L (and possibly a thin window W) between the objective O and specimen T. Using the principle of reciprocity, it may be considered optically equivalent to a conventional transmission electron microscope, if the beams were reversed. The layer of gas or solid material after the specimen in the STEM or before the specimen in TEM has no great effect on resolution or contrast and so is ignored here.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

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