Over 1.8 GW/cm2 beveled-mesa NiO/β-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability
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2020 ◽
Vol 67
(12)
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pp. 5628-5632
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1999 ◽
Vol 43
(7)
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pp. 1215-1217
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2002 ◽
Vol 101
(1)
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pp. 85-88
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2015 ◽
Vol 45
(2)
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pp. 1175-1183
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1974 ◽
Vol 10
(9)
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pp. 790-791
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2016 ◽
Vol 80
(1)
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pp. 201-207
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