Capacitance–voltage characteristics of Pt/hBN/WSe2 metal–insulator–semiconductor capacitor doped by charge-transfer process

2022 ◽  
Vol 120 (2) ◽  
pp. 023102
Author(s):  
HoHyun Im ◽  
Geonyeop Lee ◽  
Hyunik Park ◽  
Dongryul Lee ◽  
Jihyun Kim
Keyword(s):  
Charge Transfer ◽  
Transfer Process ◽  
Charge Transfer Process ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Capacitance Voltage

Study of charge transfer process in system of «hemoglobin-electrode» at level of individual molecules

2018 ◽  
pp. 71-74
Author(s):  
N. A. Davletkildeev ◽  
◽  
D. V. Sokolov ◽  
E. A. Zimbovich ◽  
E. Yu. Mosur ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Transfer Process ◽  
Charge Transfer Process

scholarly journals Impact of the charge transfer process on the Fe2+/Fe3+distribution at Fe3O4 magnetic surface induced by deposited Pd clusters

2021 ◽  
pp. 121879
Author(s):  
Bertrand Sitamtze Youmbi ◽  
Carl-Hugo Pélisson ◽  
Audrey Denicourt-Nowicki ◽  
Alain Roucoux ◽  
Jean-Marc Greneche
Keyword(s):  
Charge Transfer ◽  
Transfer Process ◽  
Magnetic Surface ◽  
Charge Transfer Process ◽  
Pd Clusters

EPR Study on the complex formed by charge-transfer process between ground-state acceptor chloranil and nine donors

2010 ◽  
Vol 16 (5) ◽  
pp. 397-403
Author(s):  
Shi Ji-Liang ◽  
Zhou Cheng-Ming ◽  
Yi Hu-Nan ◽  
Qiu Zhi-Hai ◽  
Fu Yao-Hong ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Transfer Process ◽  
Ground State ◽  
Charge Transfer Process

Capacitance-voltage measurements on a p-type InSb metal/insulator/semiconductor structure with Si3N4 as the insulator

1989 ◽  
Vol 168 (2) ◽  
pp. 157-163 ◽  
Author(s):  
B. Ullrich ◽  
F. Kuchar ◽  
R. Meisels ◽  
F. Olcaytug ◽  
A. Jachimowicz
Keyword(s):  
Semiconductor Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Capacitance Voltage ◽  
P Type

Optical Study of the Fe3+-Related Emission at 0.5 eV in InP:Fe

1992 ◽  
Vol 262 ◽  
Author(s):  
Klaus Pressel ◽  
G. Bohnert ◽  
A. Dörnen ◽  
K. Thonke
Keyword(s):  
Fourier Transform ◽  
Fine Structure ◽  
Charge Transfer ◽  
Transfer Process ◽  
Decay Time ◽  
Optical Study ◽  
Charge Transfer Process ◽  
Excitation Mechanism ◽  
Different Temperatures ◽  
A Charge

ABSTRACTThe 0.5 eV (2.5 μm 4000 cm1) emission band in InP has been studied by optical spectroscopy. By the use of Fourier-transform-infrared photoluminescence we have been able to observe at least a three-fold fine structure in the zero-phonon transitions at ∼ 4300 cm−1 which are studied at different temperatures. Based on the fine structure and the long decay time of 1.1 ms we ascribe the 0.5 eV emission to the 4T1 → 6A1 spin-flip transition of Fe3+. The excitation spectrum of this Fe3+-related emission shows a characteristic fine structure at ∼ 1.13 eV which belongs to a charge-transfer process of the type: Fe3+ + hv (1.13 eV) → [Fe2+, bound hole]. We discuss the excitation mechanism of the 0.5 eV emission by charge-transfer states and compare the results with an emission at 3057 cm1 in GaAs, which we attribute to the same Fe3+ transition (decay time: 1.9 ms).

Experimental separation of the Thomas charge-transfer process in high-velocityp−Hecollisions

2006 ◽  
Vol 73 (5) ◽  
Author(s):  
D. Fischer ◽  
K. Støchkel ◽  
H. Cederquist ◽  
H. Zettergren ◽  
P. Reinhed ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Transfer Process ◽  
Charge Transfer Process
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