scholarly journals Correction for Liao et al., Metal–insulator-transition engineering by modulation tilt-control in perovskite nickelates for room temperature optical switching

2018 ◽  
Vol 115 (43) ◽  
pp. E10284-E10284 ◽  
Keyword(s):  
Optical Switching ◽  
Room Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

scholarly journals Metal–insulator-transition engineering by modulation tilt-control in perovskite nickelates for room temperature optical switching

2018 ◽  
Vol 115 (38) ◽  
pp. 9515-9520 ◽  
Author(s):  
Zhaoliang Liao ◽  
Nicolas Gauquelin ◽  
Robert J. Green ◽  
Knut Müller-Caspary ◽  
Ivan Lobato ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Switching ◽  
Room Temperature ◽  
Target Material ◽  
Insulator Transition ◽  
Fine Tuning ◽  
Perovskite Oxide ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Bond Angles

In transition metal perovskites ABO3, the physical properties are largely driven by the rotations of the BO6 octahedra, which can be tuned in thin films through strain and dimensionality control. However, both approaches have fundamental and practical limitations due to discrete and indirect variations in bond angles, bond lengths, and film symmetry by using commercially available substrates. Here, we introduce modulation tilt control as an approach to tune the ground state of perovskite oxide thin films by acting explicitly on the oxygen octahedra rotation modes—that is, directly on the bond angles. By intercalating the prototype SmNiO3 target material with a tilt-control layer, we cause the system to change the natural amplitude of a given rotation mode without affecting the interactions. In contrast to strain and dimensionality engineering, our method enables a continuous fine-tuning of the materials’ properties. This is achieved through two independent adjustable parameters: the nature of the tilt-control material (through its symmetry, elastic constants, and oxygen rotation angles), and the relative thicknesses of the target and tilt-control materials. As a result, a magnetic and electronic phase diagram can be obtained, normally only accessible by A-site element substitution, within the single SmNiO3 compound. With this unique approach, we successfully adjusted the metal–insulator transition (MIT) to room temperature to fulfill the desired conditions for optical switching applications.

Transport Anomalies above Room Temperature and Metal-Insulator Transition of High-Tc Oxides

1994 ◽  
pp. 145-150
Author(s):  
Masatoshi Sato ◽  
Takashi Nishikawa ◽  
Jun Takeda ◽  
Hiroshi Harashina ◽  
Shinichi Shamoto ◽  
...  
Keyword(s):  
Room Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
High Tc

Metal–insulator transition at room temperature and infrared properties of Nd0.7Eu0.3NiO3 thin films

2002 ◽  
Vol 81 (4) ◽  
pp. 619-621 ◽  
Author(s):  
F. Capon ◽  
P. Laffez ◽  
J.-F. Bardeau ◽  
P. Simon ◽  
P. Lacorre ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Tunable metal-insulator transition in Nd1−xYxNiO3 (x = 0.3, 0.4) perovskites thin film at near room temperature

2015 ◽  
Vol 107 (2) ◽  
pp. 021904 ◽  
Author(s):  
Tao Shao ◽  
Zeming Qi ◽  
Yuyin Wang ◽  
Yuanyuan Li ◽  
Mei Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

scholarly journals Controlling the sharpness of room-temperature metal-insulator transition in epitaxial Sm0.5Nd0.5NiO3 films

AIP Advances ◽  
2013 ◽  
Vol 3 (6) ◽  
pp. 062133 ◽  
Author(s):  
X. K. Lian ◽  
F. Chen ◽  
X. L. Tan ◽  
L. F. Wang ◽  
X. F. Xuan ◽  
...  
Keyword(s):  
Room Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

scholarly journals ANGLE-SCANNED PHOTOEMISSION ON YbHx: RELEVANCE FOR SWITCHABLE MIRRORS

2002 ◽  
Vol 09 (01) ◽  
pp. 235-241 ◽  
Author(s):  
J. HAYOZ ◽  
C. KOITZSCH ◽  
D. POPOVIĆ ◽  
M. BOVET ◽  
D. NAUMOVIĆ ◽  
...  
Keyword(s):  
Optical Switching ◽  
Room Temperature ◽  
Visual Inspection ◽  
Reaction Cell ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
X Ray ◽  
Photoelectron Diffraction ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron

Yttrium, lantanum and rare earth elements can be loaded with hydrogen inducing a metal–insulator transition and giving rise to optical switching from reflecting to transparent. We present angle-scanned photoemission experiments characterizing thin YbH x films grown on W(110) at room temperature. Hydrogen loading is performed in an ultrahigh-vacuum-compatible high pressure (1 bar) reaction cell. Via full-hemispherical X-ray photoelectron diffraction and low energy electron diffraction, it is demonstrated that these films grow well-ordered and single-crystalline. Ultraviolet photoemission reveals a gap for the dihydride phase confirming a transition from reflecting to transparent as seen by visual inspection. Ion implantation through additional H+ sputtering allows one to increase the hydrogen content to x ≈ 2.4.

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