Study on ferroelectric and dielectric properties of Li-doped ZnO ceramics and thin films prepared by PLD method

2001 ◽  
Vol 252 (1) ◽  
pp. 265-271 ◽  
Author(s):  
Z. C. Wu ◽  
X. M. Zhang ◽  
J.-M. Liu ◽  
Q. C. Li ◽  
X. Y. Chen ◽  
...  
2010 ◽  
Vol 97 (19) ◽  
pp. 192903 ◽  
Author(s):  
A. Soukiassian ◽  
A. Tagantsev ◽  
N. Setter

2004 ◽  
Vol 825 ◽  
Author(s):  
Neha Awasthi ◽  
P. Bhattacharya ◽  
R.S. Katiyar

AbstractTransition metal doped (Mn, Fe and V) ZnO ceramics and their thin films were prepared by pulsed laser deposition on glass substrates. The ceramic targets did not show any additional phase formation from XRD measurement, except for high Fe concentrations. Optical absorption showed sub-band gap absorption for Mn doping. The band gap was shifted by 0.06 eV for V doped ZnO as concentration was increased to 10%. Micro Raman spectra showed some defect induced modes for all the transition metals doped ZnO ceramics. In V doped ZnO ceramics there was two phonon induced resonance Raman scattering with increase in dopant concentrations. Raman spectra for thin films did not show any significant additional modes for Mn and Fe. However V doped ZnO thin films showed an additional mode for concentration ≥5 %.


2020 ◽  
Vol 31 (22) ◽  
pp. 20113-20128
Author(s):  
Md. Zahidur Rahaman ◽  
Hidekazu Tanaka ◽  
A. K. M. Akther Hossain

2018 ◽  
Vol 20 (45) ◽  
pp. 28712-28719 ◽  
Author(s):  
H. V. S. Pessoni ◽  
P. Banerjee ◽  
A. Franco

Dielectric properties and impedance spectroscopic studies of single phase Zn1−xCoxO (0 ≤ x ≤ 0.05) ceramics, synthesized by a pressure-less solid state reaction method, have been carried out to investigate the origin of colossal dielectric permittivity (CP), ε′ ∼ 105, in a wide frequency (2 × 101–2 × 106 Hz) range.


2010 ◽  
Vol 25 (7) ◽  
pp. 711-716 ◽  
Author(s):  
Xue-Tao WANG ◽  
Li-Ping ZHU ◽  
Zhi-Gao YE ◽  
Zhi-Zhen YE ◽  
Bing-Hui ZHAO

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