Amorphous silicon carbide photoelectrode for hydrogen production directly from water using sunlight

2009 ◽  
Vol 89 (28-30) ◽  
pp. 2723-2739 ◽  
Author(s):  
F. Zhu ◽  
J. Hu ◽  
I. Matulionis ◽  
T. Deutsch ◽  
N. Gaillard ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Hydrogen Production ◽  
Amorphous Silicon ◽  
Amorphous Silicon Carbide

scholarly journals Amorphous Silicon Carbide Photoelectrode for Hydrogen Production from Water using Sunlight

Solar Energy ◽  
10.5772/8074 ◽  
2010 ◽  
Author(s):  
Feng Zhu ◽  
Jian Hu ◽  
Ilvydas Matulionis ◽  
Todd Deutsch ◽  
Nicolas Gaillard ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Hydrogen Production ◽  
Amorphous Silicon ◽  
Amorphous Silicon Carbide

Development of a hybrid photoelectrochemical (PEC) device with amorphous silicon carbide as the photoelectrode for water splitting

2009 ◽  
Vol 1171 ◽  
Author(s):  
Jian Hu ◽  
Feng Zhu ◽  
Ilvydas Matulionis ◽  
Todd Deutsch ◽  
Nicolas Gaillard ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Hydrogen Production ◽  
Amorphous Silicon ◽  
Water Splitting ◽  
Hybrid Cell ◽  
Ruthenium Oxide ◽  
Flat Band ◽  
Zero Bias ◽  
Amorphous Silicon Carbide ◽  
Hybrid Device

AbstractWe report on an integrated photoelectrochemical (PEC) device for hydrogen production using amorphous silicon carbide (a-SiC:H) material as the photoelectrode in conjunction with an amorphous silicon (a-Si:H) tandem photovoltaic device. With the use of a-Si:H tandem solar cell, the flat-band potential of the hybrid PEC structure shifts significantly below the H2O/O2 half-reaction potential and is in an appropriate position to facilitate water splitting. Under reverse bias, saturated photocurrent of the hybrid device ranges between 3 to 5 mA/cm2 under AM1.5 light intensity. In a two-electrode setup (with ruthenium oxide counter electrode), which is analogous to a real PEC configuration, the hybrid cell produces photocurrent of about 0.83 mA/cm2at zero bias and hydrogen production is observed. The hybrid device exhibits good durability in pH2 buffered electrolyte for up to 150 hours (so far tested).

Structural relaxation of amorphous silicon carbide thin films in thermal annealing

2008 ◽  
Vol 516 (12) ◽  
pp. 3855-3861 ◽  
Author(s):  
Kun Xue ◽  
Li-Sha Niu ◽  
Hui-Ji Shi ◽  
Jiwen Liu
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Structural Relaxation ◽  
Amorphous Silicon Carbide

Ion beam effects on the hydrogenated bonds of amorphous silicon carbide

2000 ◽  
Vol 166-167 ◽  
pp. 404-409 ◽  
Author(s):  
P. Musumeci ◽  
L. Calcagno ◽  
A. Makhtari ◽  
P. Baeri ◽  
G. Compagnini ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Ion Beam ◽  
Amorphous Silicon Carbide
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