Analytic solution of a simple model for negative differential resistance

1974 ◽  
Vol 7 (2) ◽  
pp. 371-382 ◽  
Author(s):  
T M Hayes
Keyword(s):  
Simple Model ◽  
Negative Differential Resistance ◽  
Analytic Solution ◽  
Differential Resistance

scholarly journals First Principle Study of Salinity Measurement by 2D Material

2021 ◽  
Vol 2021 ◽  
pp. 1-7
Author(s):  
Fan Jiang ◽  
Bo Hu ◽  
Weiguang Jia ◽  
Yi Zhou
Keyword(s):  
Electron Transport ◽  
Simple Model ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
First Principle ◽  
The Novel ◽  
2D Material ◽  
First Principle Calculations ◽  
Conductive Medium ◽  
Electron Transport Property

By using first principle calculations, a simple model of salinity sensor based on graphene electrode is constructed and its electron transport property is systematically investigated. It is found that all saltwater clusters at different salinity exhibit an obvious increase of the current while the saltwater to be detected is passing through the device. Moreover, only changing one Na atom acted as the conductive medium, and the electron transport behaviors could be clearly distinguished among the saltwater by negative differential resistance phenomenon, which demonstrates that the graphene-based salinity sensor could be capable of distinguishing saltwater at different salinity efficiently and accurately. This study provides a new path for the creation of the novel salinity sensor by graphene and other 2D material electrode.

Compositional Tuning of Negative Differential Resistance in Bulk Silver Iodide Memristor

2020 ◽  
Author(s):  
SMITA GAJANAN NAIK ◽  
Mohammad Hussain Kasim Rabinal
Keyword(s):  
Power Consumption ◽  
Negative Differential Resistance ◽  
Silver Iodide ◽  
Differential Resistance ◽  
Fast Response ◽  
Low Power Consumption ◽  
Switching Effect ◽  
Memory Switching ◽  
Bulk Silver ◽  
Emerging Memory

Electrical memory switching effect has received a great interest to develop emerging memory technology such as memristors. The high density, fast response, multi-bit storage and low power consumption are their...

Experimental Studies of New GaAs Metal/Insulator/p-n+Switches Using Low Temperature Oxide

2002 ◽  
Vol 25 (3) ◽  
pp. 233-237
Author(s):  
K. F. Yarn
Keyword(s):  
Low Temperature ◽  
Negative Differential Resistance ◽  
Doping Concentration ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Switching Behavior ◽  
Metal Insulator ◽  
Turn On ◽  
Temperature Oxide ◽  
Phase Chemical

First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to105has been obtained.

scholarly journals Atomic chain of carbon atoms: Smallest negative differential resistance device

2021 ◽  
Vol 1797 (1) ◽  
pp. 012047
Author(s):  
Rinki Bhowmick ◽  
Mausumi Chattopadhyaya ◽  
Jit Chakraborty ◽  
Swarnendu Maity ◽  
Arnab Basu ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Atomic Chain
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