Capacitively coupled plasma source operating in Xe/Ar mixtures

2005 ◽  
Vol 38 (2) ◽  
pp. 287-299 ◽  
Author(s):  
N Yu Babaeva ◽  
J K Lee ◽  
J W Shon
2012 ◽  
Vol 79 (5) ◽  
pp. 467-472
Author(s):  
K. T. A. L. BURM

AbstractAn argon plasma is created from a general capacitively coupled plasma source and monitored by optical emission spectroscopy. A relation between the line intensity and the applied voltage is obtained and discussed. The plasma shows paraelectric behavior. A linear relation exists between the electric capacity of the capacitively coupled plasma and the applied voltage. This linear relation can be used in a new voltage measurement technique in which the applied voltage can be calculated from the measured line intensity.


2005 ◽  
Vol 33 (2) ◽  
pp. 382-383 ◽  
Author(s):  
K. Bera ◽  
D. Hoffman ◽  
S. Shannon ◽  
G. Delgadino ◽  
Yan Ye

1999 ◽  
Vol 14 (4) ◽  
pp. 541-545 ◽  
Author(s):  
Sorin D. Anghel ◽  
Tiberiu Frentiu ◽  
Emil A. Cordos ◽  
Alpar Simon ◽  
Adrian Popescu

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 993
Author(s):  
Yong-Hyun Kim ◽  
Jong-Sik Kim ◽  
Dae-Chul Kim ◽  
Young-Woo Kim ◽  
Jong-Bae Park ◽  
...  

We constructed a capacitively coupled plasma (CCP) source and installed various diagnostic tools to perform process diagnosis using a plasma process gas (CxFy). We obtained the energy and mass distributions of the ions and radicals from Ar, C4F8/Ar, and C4F6/Ar plasmas. The energy distribution of the ions incident on the substrate was controlled using the self-bias voltage, and the ion energy was found to be inversely proportional to the mass. The measured species and density of the ions and radicals can help understand plasma process results as they provide information about the ions and radicals incident on the substrate.


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