scholarly journals Condensation coefficients in plasma sputtering deposition

2007 ◽  
Vol 40 (7) ◽  
pp. 2121-2123 ◽  
Author(s):  
Pascal Brault ◽  
Anne-Lise Thomann ◽  
Jean-Philippe Rozenbaum
Keyword(s):  
Sputtering Deposition ◽  
Plasma Sputtering

scholarly journals Composite Scaffolds Based on Silver Nanoparticles for Biomedical Applications

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Jenel Marian Patrascu ◽  
Ioan Avram Nedelcu ◽  
Maria Sonmez ◽  
Denisa Ficai ◽  
Anton Ficai ◽  
...  
Keyword(s):  
Escherichia Coli ◽  
Silver Nanoparticles ◽  
Composite Materials ◽  
Chemical Reaction ◽  
Biomedical Applications ◽  
Chemical Reduction ◽  
Composite Scaffolds ◽  
Sputtering Deposition ◽  
Plasma Sputtering

This paper presents the synthesis, characterisation, andin vitrotesting of homogenous and heterogeneous materials containing silver nanoparticles (nanoAg). Three types of antiseptic materials based on collagen (COLL), hydroxyapatite (HA), and collagen/hydroxyapatite (COLL/HA) composite materials were obtained. The synthesis of silver nanoparticles was realized by chemical reaction as well as plasma sputtering deposition. The use of chemical reduction allows the synthesis of homogenous materials while the plasma sputtering deposition can be easily used for the synthesis of homogeneous and heterogeneous support. Based on thein vitroassays clear antiseptic activity againstEscherichia coliwas relieved even at low content of nanoAg (10 ppm).

QUICK SYNTHESIS OF CARBON NITRIDE FILMS BY NEW DC HOLLOW CATHODE PLASMA SPUTTERING DEPOSITION TECHNIQUE

2005 ◽  
Vol 19 (30) ◽  
pp. 4437-4447 ◽  
Author(s):  
P. YANG ◽  
X. P. FENG ◽  
Y. C. SHI ◽  
Y. H. YAN ◽  
J. ZHANG
Keyword(s):  
Substrate Temperature ◽  
Hollow Cathode ◽  
Fourier Transformation ◽  
Carbon Nitride ◽  
Room Temperature ◽  
Particle Energy ◽  
Deposition Technique ◽  
Cathode Plasma ◽  
Sputtering Deposition ◽  
Plasma Sputtering

High N content of carbon nitride films are quickly deposited onto Si (100) substrates at room temperature by using DC hollow cathode plasma sputtering deposition technique. The deposition rate is up to 283 nm/min at the bias voltage of 400 V. The properties of the films are characterized by using XPS, Raman (scattering) and Fourier transformation infrared (FTIR) spectroscopy. Experiments results provide direct evidences that the structures of CN films can be controlled by regulating bias voltages. The maximum sp3 C – N concentration up to 0.73 is obtained. Raman data is used to confirm XPS results. FTIR of the films clearly show C – N and C = N components (1000–1800 cm-1) together with a tiny peak C ≡ N (2181 cm-1). By reducing particle energy and substrate temperature, we have succeeded in suppressing the mechanisms of losing N -contain species during deposition, and achieved a large amount of sp3 bonds of CN films.

Plasma sputtering deposition of platinum into porous fuel cell electrodes

2004 ◽  
Vol 37 (24) ◽  
pp. 3419-3423 ◽  
Author(s):  
P Brault ◽  
A Caillard ◽  
A L Thomann ◽  
J Mathias ◽  
C Charles ◽  
...  
Keyword(s):  
Fuel Cell ◽  
Fuel Cell Electrodes ◽  
Sputtering Deposition ◽  
Plasma Sputtering

Comparison of Pd/(Bulk SiC) Catalysts Prepared by Atomic Beam Deposition and Plasma Sputtering Deposition: Characterization and Catalytic Properties

2000 ◽  
Vol 190 (1) ◽  
pp. 49-59 ◽  
Author(s):  
A. Berthet ◽  
A.L. Thomann ◽  
F.J. Cadete Santos Aires ◽  
M. Brun ◽  
C. Deranlot ◽  
...  
Keyword(s):  
Atomic Beam ◽  
Catalytic Properties ◽  
Sputtering Deposition ◽  
Plasma Sputtering ◽  
Atomic Beam Deposition ◽  
Beam Deposition

Electrical performance of low cost cathodes prepared by plasma sputtering deposition in microbial fuel cells

2012 ◽  
Vol 31 (1) ◽  
pp. 164-169 ◽  
Author(s):  
Olivier Lefebvre ◽  
Zhe Tang ◽  
Martin P.H. Fung ◽  
Daniel H.C. Chua ◽  
In Seop Chang ◽  
...  
Keyword(s):  
Fuel Cells ◽  
Microbial Fuel Cells ◽  
Low Cost ◽  
Electrical Performance ◽  
Sputtering Deposition ◽  
Plasma Sputtering

Nonstoichiometry of Epitaxial FeTiO3+δ Films

2002 ◽  
Vol 746 ◽  
Author(s):  
Tatsuo Fujii ◽  
Makoto Sadai ◽  
Masakazu Kayano ◽  
Makoto Nakanishi ◽  
Jun Takada
Keyword(s):  
Substrate Temperature ◽  
Oxygen Pressure ◽  
Room Temperature ◽  
Oxygen Nonstoichiometry ◽  
Epitaxial Thin Films ◽  
Helicon Plasma ◽  
Sputtering Deposition ◽  
Plasma Sputtering ◽  
Valence States ◽  
Fe Ions

ABSTRACTEpitaxial thin films of (001)-oriented FeTiO3+δ were prepared on α-Al2O3(001) single crystalline substrates by helicon plasma sputtering technique. The FeTiO3+δ films had large oxygen nonstoichiometry, which seriously depended on both substrate temperature and oxygen pressure during the sputtering deposition. The valence states of Fe ions in FeTiO3+δ changed monotonically from Fe2+ to Fe3+ with decreasing the substrate temperature from 900 to 400°C or with increasing the oxygen pressure from 0.9 to 1.8×10-6 Pa. The change of Fe valence states from Fe2+ to Fe3+ induced the magnetic phase transition only for the films prepared at 900°C. The films containing Fe2+ were paramagnetic while those with Fe3+ were antiferromagnetic at room temperature. The oxygen nonstoichiometry of the FeTiO3+δ films was probably produced by cation vacancies and disarrangement of Fe3+ and Ti4+ ions, which randomly occupied both interstitial and substitutional sites of the FeTiO3 related structure.

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