Optical etalon effects and electronic structure in silicon-germanium 4 monolayer: 4 monolayer strained layer superlattices

1991 ◽  
Vol 6 (1) ◽  
pp. 18-26 ◽  
Author(s):  
A C Churchill ◽  
P C Klipstein ◽  
C J Gibbings ◽  
M A Gell ◽  
M E Jones ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Silicon Germanium ◽  
Strained Layer ◽  
Strained Layer Superlattices

Electronic structure of cadmium-telluride–zinc-telluride strained-layer superlattices under pressure

1989 ◽  
Vol 40 (8) ◽  
pp. 5522-5528 ◽  
Author(s):  
B. Gil ◽  
D. J. Dunstan ◽  
J. Calatayud ◽  
H. Mathieu ◽  
J. P. Faurie
Keyword(s):  
Electronic Structure ◽  
Cadmium Telluride ◽  
Zinc Telluride ◽  
Strained Layer ◽  
Strained Layer Superlattices

Electronic Structure and Optical Properties of Strained Layer Superlattices

1991 ◽  
pp. 509-521
Author(s):  
G. Duggan ◽  
K. J. Moore ◽  
K. Woodbridge ◽  
C. Roberts ◽  
N. J. Pulsford ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Strained Layer ◽  
Strained Layer Superlattices

Electronic structure of strained layer superlattices from tight binding theory

1988 ◽  
Vol 4 (4-5) ◽  
pp. 511-513 ◽  
Author(s):  
H. Rücker ◽  
F. Bechstedt ◽  
R. Enderlein ◽  
D. Hennig ◽  
S. Wilke
Keyword(s):  
Electronic Structure ◽  
Tight Binding ◽  
Binding Theory ◽  
Strained Layer ◽  
Strained Layer Superlattices

Silicon/germanium strained layer superlattices

1989 ◽  
Vol 95 (1-4) ◽  
pp. 431-438 ◽  
Author(s):  
G. Abstreiter ◽  
K. Eberl ◽  
E. Friess ◽  
W. Wegscheider ◽  
R. Zachai
Keyword(s):  
Silicon Germanium ◽  
Strained Layer ◽  
Strained Layer Superlattices

Electronic structure of Ge/Si monolayer strained-layer superlattices

1989 ◽  
Vol 39 (6) ◽  
pp. 3741-3757 ◽  
Author(s):  
T. P. Pearsall ◽  
J. Bevk ◽  
J. C. Bean ◽  
J. Bonar ◽  
J. P. Mannaerts ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Strained Layer ◽  
Strained Layer Superlattices

Properties of HgTe:ZnTe Strained Layer Superlattices Grown by MOVPE

1989 ◽  
Vol 161 ◽  
Author(s):  
J.T. Mullins ◽  
P.A. Clifton ◽  
P.D. Brown ◽  
D.O. Hall ◽  
A.W. Brinkman
Keyword(s):  
Electronic Structure ◽  
Theoretical Calculations ◽  
Biaxial Compression ◽  
Strained Layer ◽  
Strained Layer Superlattices

ABSTRACTHgTe:ZnTe superlattices have been grown by thermal MOVPE at temperatures down to 325°C. At this temperature, interdiffusion is sufficiently low to make superlattice periods as low as 45A practicable. The results of theoretical calculations of the electronic structure of these materials are also reported. These show that the electronic structure may be significantly different to that found for the HgTe:CdTe system due to the large biaxial compression present in the HgTe well layers.

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