High resolution front-side visualization of charge stored in EEPROM with scanning nonlinear dielectric microscopy (SNDM)

2021 ◽  
Author(s):  
Xiao Mei Zeng ◽  
Qing Liu ◽  
Jing Yun Tay ◽  
Kai Yang Chew ◽  
Jun Wei Cheah ◽  
...  
Keyword(s):  
High Resolution ◽  
Front Side ◽  
Nonlinear Dielectric

A Novel Deprocessing Technique for Revealing Transistor-Level Damage on 7nm FinFET Devices

2020 ◽  
Author(s):  
Fei Long Xu ◽  
Phoumra Tan ◽  
Dan Nuez
Keyword(s):  
High Resolution ◽  
Flip Chip ◽  
Fault Localization ◽  
Wet Etching ◽  
Efficient Technique ◽  
Solid Immersion Lens ◽  
Front Side ◽  
Flip Chip Packaging ◽  
Metal Layers

Abstract Physical FA innovations in advanced flip-chip devices are essential, especially for die-level defects. Given the increasing number of metal layers, traditional front-side deprocessing requires a lot of work on parallel lapping and wet etching before reaching the transistor level. Therefore, backside deprocessing is often preferred for checking transistor-level defects, such as subtle ESD damage. This paper presents an efficient technique that involves precise, automated die thinning (from 760µm to 5µm), high-resolution fault localization using a solid immersion lens, and rigorous KOH etch. Using this technique, transistor-level damage was revealed on advanced 7nm FinFET devices with flip-chip packaging.

Observation of Dopant Profile of Transistors Using Scanning Nonlinear Dielectric Microscopy

2009 ◽  
Vol 1195 ◽  
Author(s):  
Koichiro Honda ◽  
Yasuo Cho
Keyword(s):  
High Resolution ◽  
High Performance ◽  
Dopant Concentration ◽  
Memory Cell ◽  
Quantitative Agreement ◽  
Nonlinear Dielectric ◽  
Dopant Profile ◽  
Density Values ◽  
P Type ◽  
Dopant Profiles

AbstractWe have demonstrated that scanning nonlinear dielectric microscopy (SNDM) exhibited high performance and high resolution in observing the dopant concentration profile of transistors. In this study, good quantitative agreement between the SNDM signals and dopant density values obtained by SIMS in standard Si samples, which dopant concentrations have been calibrated. We succeeded in visualizing high-resolution dopant profiles in n- and p-type MOSFET with 40 nm gate channels. It is considered that SNDM would be an effective method in measuring the quantitative two-dimensional dopant profiles of transistors. Finally, we have succeeded in detecting the dopant profiles of SRAM memory cell transistors.

Nanometer Scale Domain Measurement of Ferroelectric Thin Films Using Scanning Nonlinear Dielectric Microscopy

2000 ◽  
Vol 655 ◽  
Author(s):  
Hiroyuki Odagawa ◽  
Kaori Matsuura ◽  
Yasuo Cho
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Resolution ◽  
Ferroelectric Domain ◽  
Ferroelectric Thin Films ◽  
Experimental Result ◽  
Nanometer Scale ◽  
Nonlinear Dielectric ◽  
Pzt Thin Film ◽  
Very High

AbstractA very high-resolution scanning nonlinear dielectric microscope with nanometer resolution was developed for the observation of ferroelectric polarization. We demonstrate that the resolution of the microscope is of a sub-nanometer order by measurement of domains in PZT and SBT thin films. The experimental result shows that nano-sized 180° c-c ferroelectric domain with the width of 1.5 nm for PZT thin film are observed. The result also shows that the resolution of the microscope is less than 0.5 nm for the PZT thin film.

High Resolution Mapping of Subsurface Defects at SiO2/SiC Interfaces by Time-Resolved Scanning Nonlinear Dielectric Microscopy

2018 ◽  
Author(s):  
Yuji Yamagishi ◽  
Yasuo Cho
Keyword(s):  
High Resolution ◽  
Lateral Spread ◽  
Time Resolved ◽  
Layer Width ◽  
Nonlinear Dielectric ◽  
High Resolution Mapping ◽  
Resolution Observation ◽  
Resolution Mapping ◽  
Tip Radius ◽  
Density Of Interface States

Abstract High resolution observation of density of interface states (Dit) at SiO2/4H-SiC interfaces was performed by time-resolved scanning nonlinear dielectric microscopy (tr-SNDM). The sizes of the non-uniform contrasts observed in the map of Dit were in the order of several tens of nanometers, which are smaller than the value reported in the previous study (>100 nm). The simulation of the tr-SNDM measurement suggested that the spatial resolution of tr-SNDM is down to the tip radius of the cantilever used for the measurement and can be smaller than the lateral spread of the depletion layer width.

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