A CMOS low power, process/temperature variation tolerant RSSI with an integrated AGC loop

2013 ◽  
Vol 34 (3) ◽  
pp. 035007
Author(s):  
Qianqian Lei ◽  
Min Lin ◽  
Yin Shi
2021 ◽  
Author(s):  
Cuong Do ◽  
Ashwin A. Seshia

Temperature variation is one of the most crucial factors that need to be cancelled in MEMS sensors. Many traditional methodologies require an additional circuit to compensate for temperature. This work describes a new active temperature compensation method for MEMS capacitive strain sensor without any additional circuit. The proposed method is based on a complement 2-D capacitive structure design. It consumes zero-power, which is essential toward the realization of a low-power temperature-compensated sensor in battery-powered or energy-harvesting applications<br>


2017 ◽  
Vol 866 ◽  
pp. 392-397
Author(s):  
Nattapong Phanthuna ◽  
Chaiwat Jassadajin

This paper studies the relationship between the value of temperature variation and the resistance value of each type of general resistors as well as also determines the temperature coefficient value of each resistor type. All obtained results will be compared to build a guideline for selecting the resistor to apply in any applications accurately and properly. Each type of 1 k-ohm resistor that has different power is used to study its properties and is controlled its temperature variation to be in range of 20 to 30 degree Celsius. An experimental setup to control the temperature variation of the resistors in this paper is that the resistors are put into an oil bath controlled its temperature after that measuring the changed resistance value of the resistors following oil temperature in the bath. The experimental result demonstrates that the temperature variation affects to change the resistance value of Carbon Film type the most but affects to change the resistance value of Wire Wound type with low power the least.


2012 ◽  
Vol 33 (12) ◽  
pp. 125010
Author(s):  
Qianqian Lei ◽  
Min Lin ◽  
Yin Shi

2021 ◽  
Author(s):  
Cuong Do ◽  
Ashwin A. Seshia

Temperature variation is one of the most crucial factors that need to be cancelled in MEMS sensors. Many traditional methodologies require an additional circuit to compensate for temperature. This work describes a new active temperature compensation method for MEMS capacitive strain sensor without any additional circuit. The proposed method is based on a complement 2-D capacitive structure design. It consumes zero-power, which is essential toward the realization of a low-power temperature-compensated sensor in battery-powered or energy-harvesting applications<br>


2016 ◽  
Vol 49 ◽  
pp. 29-35
Author(s):  
Neena A. Gilda ◽  
Vinayak G. Hande ◽  
D.K. Sharma ◽  
V. Ramgopal Rao ◽  
Maryam Shojaei Baghini

2021 ◽  
Author(s):  
Cuong Do ◽  
Ashwin A. Seshia

Temperature variation is one of the most crucial factors that need to be cancelled in MEMS sensors. Many traditional methodologies require an additional circuit to compensate for temperature. This work describes a new active temperature compensation method for MEMS capacitive strain sensor without any additional circuit. The proposed method is based on a complement 2-D capacitive structure design. It consumes zero-power, which is essential toward the realization of a low-power temperature-compensated sensor in battery-powered or energy-harvesting applications<br>


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