Hysteresis analysis of graphene transistor under repeated test and gate voltage stress

2014 ◽  
Vol 35 (9) ◽  
pp. 094003 ◽  
Author(s):  
Jie Yang ◽  
Kunpeng Jia ◽  
Yajuan Su ◽  
Yang Chen ◽  
Chao Zhao
Keyword(s):  
Gate Voltage ◽  
Voltage Stress ◽  
Repeated Test

Hot-carrier degradation for 90 nm gate length LDD-NMOSFET with ultra-thin gate oxide under low gate voltage stress

2007 ◽  
Vol 16 (3) ◽  
pp. 821-825
Author(s):  
Chen Hai-Feng ◽  
Hao Yue ◽  
Ma Xiao-Hua ◽  
Li Kang ◽  
Ni Jin-Yu
Keyword(s):  
Gate Voltage ◽  
Gate Oxide ◽  
Gate Length ◽  
Hot Carrier ◽  
Voltage Stress ◽  
Thin Gate Oxide ◽  
Hot Carrier Degradation

MoS2 FET based Oxygen Sensors with Gate Voltage Stress Induced Performance Enhancement

2015 ◽  
Author(s):  
Y. Tong ◽  
Z. Lin ◽  
J.T.L. Thong ◽  
D.S.H. Chan ◽  
C. Zhu
Keyword(s):  
Gate Voltage ◽  
Performance Enhancement ◽  
Oxygen Sensors ◽  
Voltage Stress

Dynamic degradation of a-InGaZnO thin-film transistors under pulsed gate voltage stress

2015 ◽  
Vol 106 (13) ◽  
pp. 133506 ◽  
Author(s):  
Huaisheng Wang ◽  
Mingxiang Wang ◽  
Qi Shan
Keyword(s):  
Thin Film ◽  
Gate Voltage ◽  
Thin Film Transistors ◽  
Voltage Stress ◽  
Dynamic Degradation

Electrical and thermal stress analysis of In2O3-Ga2O3-ZnO thin-film transistors

2009 ◽  
Vol 1201 ◽  
Author(s):  
Mami Fujii ◽  
Tomoki Maruyama ◽  
Masahiro Horita ◽  
Kiyoshi Uchiyama ◽  
Ji Sim Jung ◽  
...  
Keyword(s):  
Thin Film ◽  
Gate Voltage ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Trap Level ◽  
Density Of State ◽  
Drain Voltage ◽  
Cooling Conditions ◽  
Voltage Stress ◽  
Pressure Water

AbstractDegradation of In2O3-Ga2O3-ZnO (IGZO) thin-film transistors (TFTs)) was studied. We evaluated degradation caused by applying gate voltage and drain voltage stress. A parallel shift of the transfer curve was observed under gate voltage stress. Joule heating caused by the drain current was observed. We tried to reproduce this degradation of the transfer curve change by device simulation. When we assumed the trap level as the density of state (DOS) model and increased two kinds of trap density, we obtained properties that show the same trends as the experimental results. We concluded that two degradation mechanisms occur under gate and drain voltage stress conditions. And then, we tried to improve the TFT characteristics using high pressure water vapor (HPV) annealing. We also found that the cooling conditions after HPV annealing affect the IGZO TFT characteristics.

MoS2 oxygen sensor with gate voltage stress induced performance enhancement

2015 ◽  
Vol 107 (12) ◽  
pp. 123105 ◽  
Author(s):  
Yu Tong ◽  
Zhenhua Lin ◽  
John T. L. Thong ◽  
Daniel S. H. Chan ◽  
Chunxiang Zhu
Keyword(s):  
Gate Voltage ◽  
Oxygen Sensor ◽  
Performance Enhancement ◽  
Voltage Stress

Control of the performance of polysilicon thin-film transistor by high-gate-voltage stress

1991 ◽  
Vol 12 (12) ◽  
pp. 676-678 ◽  
Author(s):  
C.A. Dimitriadis ◽  
P.A. Coxon ◽  
A.J. Lowe ◽  
J. Stoemenos ◽  
N.A. Economou
Keyword(s):  
Thin Film ◽  
Gate Voltage ◽  
Thin Film Transistor ◽  
Voltage Stress
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