Impact of recombination on heavy ion induced single event upset cross-section

Abstract 3D TCAD simulations demonstrated that reducing the distance between the well boundary and NMOS or PMOS can mitigate the cross section of Single Event Upset (SEU) in 14 nm CMOS bulk FinFET technology. The competition of charge collection between well boundary and sensitive nodes, the enhanced restore currents and the change of bipolar effect are responsible for the decrease of SEU cross section. Different from Dual-interlock cells (DICE) design, under the presence of enough taps to ensure the rapid recovery of well potential, this approach is more effective under heavy ion irradiation of higher LET. Besides, the feasibility of this method and its effectiveness with feature size scaling down are discussed.

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Impact of heavy ion energy and species on single-event upset in commercial floating gate cells

Microelectronics Reliability ◽

10.1016/j.microrel.2021.114128 ◽

2021 ◽

Vol 120 ◽

pp. 114128

Author(s):

Bing Ye ◽

Li-Hua Mo ◽

Peng-Fei Zhai ◽

Li Cai ◽

Tao Liu ◽

...

Keyword(s):

Heavy Ion ◽

Floating Gate ◽

Single Event Upset ◽

Single Event ◽

Ion Energy

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Dependence of Temperature and Back-gate Bias on Single Event Upset Induced by Heavy Ion in a 0.2 μm DSOI CMOS Technology

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2021.3094669 ◽

2021 ◽

pp. 1-1

Author(s):

Yuchong Wang ◽

Fanyu Liu ◽

Bo Li ◽

Binhong Li ◽

Yang Huang ◽

...

Keyword(s):

Cmos Technology ◽

Heavy Ion ◽

Gate Bias ◽

Single Event Upset ◽

Single Event ◽

Back Gate

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Simulation of Thermal-Neutron-Induced Single-Event Upset Using Particle and Heavy-Ion Transport Code System

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.3377 ◽

2007 ◽

Vol 46 (6A) ◽

pp. 3377-3379

Author(s):

Yutaka Arita ◽

Koji Niita ◽

Yuji Kihara ◽

Junich Mitsuhasi ◽

Mikio Takai ◽

...

Keyword(s):

Ion Transport ◽

Thermal Neutron ◽

Heavy Ion ◽

Single Event Upset ◽

Single Event ◽

Code System ◽

Transport Code

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Acquisition and classification of static single-event upset cross section for SRAM-based FPGAs

High Power Laser and Particle Beams ◽

10.3788/hplpb20112303.0811 ◽

2011 ◽

Vol 23 (3) ◽

pp. 811-816

Author(s):

姚志斌 Yao Zhibin ◽

范如玉 Fan Ruyu ◽

郭红霞 Guo Hongxia ◽

王忠明 Wang Zhongming ◽

何宝平 He Baoping ◽

...

Keyword(s):

Cross Section ◽

Single Event Upset ◽

Single Event

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Influence of Orbital Parameters on SEU Rate of Low-Energy Proton in Nano-SRAM Device

Symmetry ◽

10.3390/sym12122030 ◽

2020 ◽

Vol 12 (12) ◽

pp. 2030

Author(s):

Bing Ye ◽

Li-Hua Mo ◽

Tao Liu ◽

You-Mei Sun ◽

Jie Liu

Keyword(s):

Heavy Ion ◽

High Energy ◽

Low Energy ◽

Single Event Upset ◽

Single Event ◽

High Energy Proton ◽

Orbital Parameters ◽

Energy Proton ◽

Orbital Height ◽

Selection Of

The on-orbit single-event upset (SEU) rate of nanodevices is closely related to the orbital parameters. In this paper, the on-orbit SEU rate (OOSR) induced by a heavy ion (HI), high-energy proton (HEP) and low-energy proton (LEP) for a 65 nm SRAM device is calculated by using the software SPACE RADIATION under different orbits based on the experimental data. The results indicate that the OOSR induced by the HI, HEP and LEP varies with the orbital parameters. In particular, the orbital height, inclination and shieling thickness are the key parameters that affect the contribution of the LEP to the total OOSR. Our results provide guidance for the selection of nanodevices on different orbits.

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