Synchrotron-radiation photoemission studies of interface formation between metals and superconductors: Al and In onYBa2Cu3O6.9

1988 ◽  
Vol 37 (7) ◽  
pp. 3741-3744 ◽  
Author(s):  
Y. Gao ◽  
I. M. Vitomirov ◽  
C. M. Aldao ◽  
T. J. Wagener ◽  
J. J. Joyce ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Interface Formation ◽  
Synchrotron Radiation Photoemission

Interface formation of Ge/ZnSe(100) and Ge/ZnS(111) heterojunctions studied by synchrotron radiation photoemission

1996 ◽  
Vol 5 (8) ◽  
pp. 590-600 ◽  
Author(s):  
Ban Da-yan ◽  
Yang Feng-yuan ◽  
Fang Rong-chuan ◽  
Xu Shi-hong ◽  
Xu Peng-shou
Keyword(s):  
Synchrotron Radiation ◽  
Interface Formation ◽  
Synchrotron Radiation Photoemission

Photoemission Studies of Amorphous Silicon/Germanium Heterojunctions

1985 ◽  
Vol 49 ◽  
Author(s):  
F. Evangelisti ◽  
S. Modesti ◽  
F. Boscherini ◽  
P. Fiorini ◽  
C. Quaresima ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Amorphous Silicon ◽  
Valence Band ◽  
Silicon Germanium ◽  
Interface Formation ◽  
Band Bending ◽  
Amorphous Silicon Germanium ◽  
Synchrotron Radiation Photoemission ◽  
Valence Band Discontinuity

AbstractThe heterostructures obtained by growing a-Ge on a-Si:H and a-Si have been investigated by synchrotron radiation photoemission. We measured valence band and core level spectra on the heterostructures grown in situ under ultrahigh-vacuum conditions. A step-by-step monitoring of possible band-bending changes during the interface formation enabled us to determine unambiguously the band discontinuities. The measured values of the valence band discontinuity were 0.2 ± 0.1 eV for a-Si:H/a-Ge and 0.0 ± 0.1 eV for a-Si/a-Ge, respectively. Evidence was found for the formation of abrupt interfaces without interdiffusion.

Synchrotron-radiation photoemission study of Ba on W(110)

1998 ◽  
Vol 58 (7) ◽  
pp. 4149-4155 ◽  
Author(s):  
Tun-Wen Pi ◽  
Ie-Hong Hong ◽  
Chiu-Ping Cheng
Keyword(s):  
Synchrotron Radiation ◽  
Photoemission Study ◽  
Synchrotron Radiation Photoemission
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