Stark effect in strongly coupled quantum wells

1988 ◽  
Vol 37 (14) ◽  
pp. 8198-8204 ◽  
Author(s):  
S. R. Andrews ◽  
C. M. Murray ◽  
R. A. Davies ◽  
T. M. Kerr
1994 ◽  
Vol 37 (4-6) ◽  
pp. 721-724 ◽  
Author(s):  
T.S. Turner ◽  
P.M. Martin ◽  
L. Eaves ◽  
H.B. Evans ◽  
P.A. Harrison ◽  
...  

1988 ◽  
Vol 53 (26) ◽  
pp. 2584-2586 ◽  
Author(s):  
J. E. Golub ◽  
P. F. Liao ◽  
D. J. Eilenberger ◽  
J. P. Harbison ◽  
L. T. Florez ◽  
...  

2013 ◽  
Vol 773 ◽  
pp. 622-627
Author(s):  
Ying Ning Qiu ◽  
Wei Sheng Lu ◽  
Stephane Calvez

The quantum confinement Stark effect of three types of GaInNAs quantum wells, namely single square quantum well, stepped quantum wells and coupled quantum wells, is investigated using the band anti-crossing model. The comparison between experimental observation and modeling result validate the modeling process. The effects of the external electric field and localized N states on the quantized energy shifts of these three structures are compared and analyzed. The external electric field applied to the QW not only changes the potential profile but also modulates the localized N states, which causes band gap energy shifts and increase of electron effective mass.


2013 ◽  
Vol 39 (4) ◽  
pp. 374-377 ◽  
Author(s):  
S. V. Gudina ◽  
Yu. G. Arapov ◽  
V. N. Neverov ◽  
S. M. Podgornykh ◽  
M. V. Yakunin

1989 ◽  
Vol 161 ◽  
Author(s):  
Z. Yang ◽  
J. F. Schetzina

ABSTRACTThe Quantum-Confined Stark Effect in II-VI semiconductor coupled quantum wells is studied theoretically. It is found that because of the difference in localization of the wavefunctions of the heavy hole and the electron subbands involved, large band gap shifts can be induced by an external electric field for quantum wells with zero-field band gaps in the spectrum region from 0.4 µm to 12 µm. Several potential device applications based on this effect are proposed.


Sign in / Sign up

Export Citation Format

Share Document