scholarly journals Spin-polarized tunneling through a diluted magnetic semiconductor quantum dot

2005 ◽  
Vol 71 (15) ◽  
Author(s):  
Kai Chang ◽  
K. S. Chan ◽  
F. M. Peeters
2009 ◽  
Vol 23 (12n13) ◽  
pp. 2826-2835
Author(s):  
T. KÜMMELL ◽  
M. GHALI ◽  
J. HUANG ◽  
R. ARIANS ◽  
G. BACHER ◽  
...  

We demonstrate electrically driven spin injection into a single semiconductor quantum dot. Spin polarized electrons are transferred from a diluted magnetic semiconductor ( ZnMnSe ) into InAs quantum dots embedded into GaAs barriers. The spin information can be extracted directly from the polarization degree of the electroluminescence signal stemming from an individual quantum dot. By slightly modifying the device design, we demonstrate a concept to electrically charge the quantum dot by a spin polarized electron and present a simple way to probe this spin state optically.


2007 ◽  
Vol 06 (01) ◽  
pp. 71-76
Author(s):  
K. GNANASEKAR ◽  
K. NAVANEETHAKRISHNAN

We theoretically demonstrate that how the Rashba spin–orbit interaction induced by the external electric field can be used to manipulate spin degree of freedom of electrons in a diluted magnetic semiconductor quantum dot (DMS QD) in the presence of a weak perpendicular magnetic field. The effects of Rashba spin–orbit interaction, induced by the electrostatic potential, on the apparent total spin splitting in a diluted magnetic semiconductor quantum dot have been studied. We propose that the apparent total spin splitting is the result of electrically tunable "renormalization" of s–d exchange interaction. It could be favorably engineered to electrically tune the spin degree of freedom in the spintronic devices.


2000 ◽  
Vol 62 (12) ◽  
pp. R7767-R7770 ◽  
Author(s):  
A. A. Maksimov ◽  
G. Bacher ◽  
A. McDonald ◽  
V. D. Kulakovskii ◽  
A. Forchel ◽  
...  

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