Tunneling anisotropic magnetoresistance in a magnetic tunnel junction with half-metallic electrodes

In this paper, we investigate the effect of vacancy defects on spin transport in graphene-based magnetic tunnel junction (MTJ). An increase in conductance was seen in vacancy-defected MTJ structure which is in contrast to the results reported in past where a decrease in conductance with vacancy was observed for graphene sheets. This increase in conductance may be due to the use of CrO2 half-metallic ferromagnet (HMF) electrodes instead of metallic or ferromagnet (FM) electrodes. Furthermore, high tunnel magnetoresistance (TMR) [Formula: see text]99% and perfect spin filtration was obtained for both vacancy-defected and no-defect (pristine) MTJ structures. The TMR in vacancy-defected structure is seen to decrease by 6.2% and by 13% at bias voltages of 1.2[Formula: see text]V and 1.4[Formula: see text]V, when compared to TMR in no-defect MTJ structure.

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Experimental observation of large tunneling anisotropic magnetoresistance in a magnetic tunnel junction without heavy metals

Applied Surface Science ◽

10.1016/j.apsusc.2020.146716 ◽

2020 ◽

Vol 526 ◽

pp. 146716

Author(s):

Zhiyong Quan ◽

Fei Zhang ◽

Zhi Yan ◽

Huihui Liu ◽

Wei Zhang ◽

...

Keyword(s):

Heavy Metals ◽

Experimental Observation ◽

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

Anisotropic Magnetoresistance

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Simulation Study on Understanding the Spin Transport in MgO Adsorbed Graphene Based Magnetic Tunnel Junction

SPIN ◽

10.1142/s2010324716500119 ◽

2016 ◽

Vol 06 (03) ◽

pp. 1650011 ◽

Cited By ~ 1

Author(s):

Ashish Raturi ◽

Sudhanshu Choudhary

Keyword(s):

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

Tunnel Barrier ◽

Pristine Graphene ◽

First Principles Calculations ◽

Graphene Nanosheet ◽

Half Metallic ◽

Filtration Effect ◽

Parallel Configuration ◽

Magneto Resistance

First principles calculations of spin-dependent electronic transport properties of magnetic tunnel junction (MTJ) consisting of MgO adsorbed graphene nanosheet sandwiched between two CrO2 half-metallic ferromagnetic (HMF) electrodes is reported. MgO adsorption on graphene opens bandgap in graphene nanosheet which makes it more suitable for use as a tunnel barrier in MTJs. It was found that MgO adsorption suppresses transmission probabilities for spin-down channel in case of parallel configuration (PC) and also suppresses transmission in antiparallel configuration (APC) for both spin-up and spin-down channel. Tunnel magneto-resistance (TMR) of 100% is obtained at all bias voltages in MgO adsorbed graphene-based MTJ which is higher than that reported in pristine graphene-based MTJ. HMF electrodes were found suitable to achieve perfect spin filtration effect and high TMR. I–V characteristics for both parallel and antiparallel magnetization states of junction are calculated. High TMR suggests its usefulness in spin valves and other spintronics-based applications.

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