Temperature-Dependent Bending Rigidity of AB -Stacked Bilayer Graphene

2021 ◽  
Vol 127 (26) ◽  
Author(s):  
S. D. Eder ◽  
S. K. Hellner ◽  
S. Forti ◽  
J. M. Nordbotten ◽  
J. R. Manson ◽  
...  
Keyword(s):  
Bilayer Graphene ◽  
Bending Rigidity ◽  
Temperature Dependent

scholarly journals Size- and temperature-dependent bending rigidity of graphene using modal analysis

Carbon ◽  
2018 ◽  
Vol 139 ◽  
pp. 334-341 ◽  
Author(s):  
Banafsheh Sajadi ◽  
Simon van Hemert ◽  
Behrouz Arash ◽  
Pierpaolo Belardinelli ◽  
Peter G. Steeneken ◽  
...  
Keyword(s):  
Modal Analysis ◽  
Bending Rigidity ◽  
Temperature Dependent

Study on temperature-dependent carrier transport for bilayer graphene

2015 ◽  
Vol 69 ◽  
pp. 115-120 ◽  
Author(s):  
Yali Liu ◽  
Weilong Li ◽  
Mei Qi ◽  
Xiaojun Li ◽  
Yixuan Zhou ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Bilayer Graphene ◽  
Temperature Dependent

Molecular dynamics study of temperature-dependent ripples in monolayer and bilayer graphene on 6H—SiC surfaces

2012 ◽  
Vol 21 (6) ◽  
pp. 066803 ◽  
Author(s):  
Chao Tang ◽  
Xiao-Lin Wei ◽  
Xin Tan ◽  
Xiang-Yang Peng ◽  
Li-Zhong Sun ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Bilayer Graphene ◽  
Temperature Dependent

scholarly journals Temperature-dependent resistivity in bilayer graphene due to flexural phonons

2011 ◽  
Vol 83 (23) ◽  
Author(s):  
H. Ochoa ◽  
Eduardo V. Castro ◽  
M. I. Katsnelson ◽  
F. Guinea
Keyword(s):  
Bilayer Graphene ◽  
Temperature Dependent ◽  
Temperature Dependent Resistivity

scholarly journals Quantifying the Charge Carrier Interaction in Metallic Twisted Bilayer Graphene Superlattices

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1306
Author(s):  
Evgueni F. Talantsev
Keyword(s):  
Charge Carrier ◽  
Bilayer Graphene ◽  
Electron Interaction ◽  
Temperature Dependent ◽  
Phonon Interaction ◽  
Linear Temperature ◽  
Electron Phonon Interaction ◽  
Wide Range ◽  
Carrier Interaction ◽  
Twisted Bilayer Graphene

The mechanism of charge carrier interaction in twisted bilayer graphene (TBG) remains an unresolved problem, where some researchers proposed the dominance of the electron–phonon interaction, while the others showed evidence for electron–electron or electron–magnon interactions. Here we propose to resolve this problem by generalizing the Bloch–Grüneisen equation and using it for the analysis of the temperature dependent resistivity in TBG. It is a well-established theoretical result that the Bloch–Grüneisen equation power-law exponent, p, exhibits exact integer values for certain mechanisms. For instance, p = 5 implies the electron–phonon interaction, p = 3 is associated with the electron–magnon interaction and p = 2 applies to the electron–electron interaction. Here we interpret the linear temperature-dependent resistance, widely observed in TBG, as p→1, which implies the quasielastic charge interaction with acoustic phonons. Thus, we fitted TBG resistance curves to the Bloch–Grüneisen equation, where we propose that p is a free-fitting parameter. We found that TBGs have a smoothly varied p-value (ranging from 1.4 to 4.4) depending on the Moiré superlattice constant, λ, or the charge carrier concentration, n. This implies that different mechanisms of the charge carrier interaction in TBG superlattices smoothly transition from one mechanism to another depending on, at least, λ and n. The proposed generalized Bloch–Grüneisen equation is applicable to a wide range of disciplines, including superconductivity and geology.

Transport properties of bilayer graphene due to charged impurity scattering: Temperature-dependent screening and substrate effects

2018 ◽  
Vol 32 (06) ◽  
pp. 1850064
Author(s):  
Dang Khanh Linh ◽  
Nguyen Quoc Khanh
Keyword(s):  
Finite Temperature ◽  
Random Phase Approximation ◽  
Random Phase ◽  
Thermal Conductance ◽  
Impurity Scattering ◽  
Bilayer Graphene ◽  
Zero Temperature ◽  
Temperature Dependent ◽  
Temperature Conductivity ◽  
Charged Impurity Scattering

We calculate the zero-temperature conductivity of bilayer graphene (BLG) impacted by Coulomb impurity scattering using four different screening models: unscreened, Thomas–Fermi (TF), overscreened and random phase approximation (RPA). We also calculate the conductivity and thermal conductance of BLG using TF, zero- and finite-temperature RPA screening functions. We find large differences between the results of the models and show that TF and finite-temperature RPA give similar results for diffusion thermopower S[Formula: see text]. Using the finite-temperature RPA, we calculate temperature and density dependence of S[Formula: see text] in BLG on SiO2, HfO2 substrates and suspended BLG for different values of interlayer distance c and distance between the first layer and the substrate d.

Temperature dependent Raman scattering of directly grown twisted bilayer graphene film using LPCVD method

Carbon ◽  
2021 ◽  
Author(s):  
Girija Shankar Papanai ◽  
Jasveer Singh ◽  
Nita Dilawar Sharma ◽  
S.G. Ansari ◽  
Bipin Kumar Gupta
Keyword(s):  
Raman Scattering ◽  
Graphene Film ◽  
Bilayer Graphene ◽  
Temperature Dependent ◽  
Twisted Bilayer Graphene

Temperature-dependent bending rigidity of graphene

2009 ◽  
Vol 94 (23) ◽  
pp. 231912 ◽  
Author(s):  
P. Liu ◽  
Y. W. Zhang
Keyword(s):  
Bending Rigidity ◽  
Temperature Dependent
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