Electrical and reliability characteristics of submicrometer nMOSFETs with oxynitride gate dielectric prepared by rapid thermal oxidation in N/sub 2/O
1991 ◽
Vol 38
(12)
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pp. 2712-2713
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2004 ◽
Vol 107
(3)
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pp. 310-316
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2000 ◽
Vol 18
(6)
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pp. 2986-2991
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