Noise minimization techniques for modulator demodulator circuits used for chopper stabilization in CMOS-MEMS sensor applications

Author(s):  
N. Y. Sutri ◽  
J. O. Dennis ◽  
M. H. Md. Khir ◽  
M. U. Mian
2013 ◽  
Vol 7 (12) ◽  
Author(s):  
Nebyu Yonas Sutri ◽  
John Ojur Dennis ◽  
Mohd Haris Md Khir ◽  
Muhammad Umer Mian ◽  
Tong Boon Tang

Author(s):  
Brian D. Sosnowchik ◽  
Liwei Lin ◽  
Albert P. Pisano

In this work, we present a rapid, low temperature process for the bonding of silicon to steel through the use of inductive heating for MEMS sensor applications. The bonding process takes as short as three seconds with a maximum bonding temperature as low as 230°C at the steel surface. The bonding strength is strong, and causes minimal damage to steel. The process has also been shown to work using leaded and leadfree bonding solder with minimal surface preparation to the steel. Four characterization experiments – tensile and compressive 4-point bend, axial extension, and fatigue tests – have been performed to validate the bonding process and materials. As such, this work illustrates the promise of applying inductive heating for the rapid silicon bonding to steel components for MEMS sensing applications.


2016 ◽  
Vol 2016 (DPC) ◽  
pp. 000397-000420
Author(s):  
Ted Tessier

WLCSP has been widely deployed in portable computing and communication devices for efficient die level packaging of integrated semiconductor and integrated passive applications. More recently with the proliferation of smart phone capabilities and applications as well as the emergence of Internet of Things and Wearable Electronics, MEMS and sensor devices in minimized package formats have become increasingly pervasive. These include image sensors, light sensors, finger print sensors as well as accelerometer, gyroscope and other MEMS motion sensing devices. It is predicted that the widespread adoption of WLCSP packaging for sensing applications will accelerate the proliferation of the incorporation of multiple sensor technologies within future communication devices. A number of these MEMS/Sensor applications have been able to leverage the existing WLCSP technology infrastructure and has led to opportunities to packaging and cost-effective standardization and miniaturization. On the other hand, some significant new changes to WLCSP process flows have also emerged that have had to be addressed. This paper will provide an overview of MEMS and Sensor applications that are currently or will use 2D, 2.5D or 3D wafer level packaging formats. Process enhancements including the ability to process thinner substrates with the adoption of temporary carrier technologies will also be highlighted.


2000 ◽  
Author(s):  
Wayne P. Liu

Abstract Sensor performance and cost are typically the main features reviewed by potential users of MEMS sensor applications. However with more options becoming available, experienced users will begin to consider more than just performance and hardware cost and will seek packaging features which reduce the effort needed to set up, calibrate and successfully operate MEMS sensor systems. A reduction in the cost of effort needed to collect good data will impact test affordability. Data from MEMS shear stress testing on cylinder boundary layer and separation bubble features will be presented to show how packaging can affect both performance and affordability. Manufacturers should ask: What is remembered the most at the conclusion of a MEMS application, the cost of hardware or the cost of effort required to collect good data?


2015 ◽  
Vol 780 ◽  
pp. 23-27 ◽  
Author(s):  
H. Fazmir ◽  
Y. Wahab ◽  
A.F.M. Anuar ◽  
M.Z. Zainol ◽  
M. Najmi ◽  
...  

A layer of ZnO thin film was deposited repetitively 15 times on a silicon substrate by sol-gel spin coating technique. The structural and electrical characteristic of the thin film was studied and presented. For structural characterization, Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) analysis were chosen while Semiconductor Parametric Analyzer (SPA) was used to measure the electrical characteristic. The ZnO thin film thickness were measured to be between 165 nm to 180 nm. The resistance increased proportionally with annealing temperature with the lowest value of 80Ω. Structurally, the grain sizes of the ZnO thin films increased with the increase in annealing temperature. The root mean square (RMS) and average surface roughness (Ra) were measured respectively.


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