Time-resolved piezoelectric nonlinearities and exciton dynamics in strained [111] p-i-n multiple quantum well structures

Author(s):  
D.R. Harken ◽  
X.R. Huang ◽  
D.S. McCallum ◽  
A.L. Smirl ◽  
J.L. Sanchez-Rojas ◽  
...  
Author(s):  
A.N. Cartwright ◽  
Paul M. Sweeney ◽  
Thomas Prunty ◽  
David P. Bour ◽  
Michael Kneissl

The presence of piezoelectric fields within p-i-n GaN/InGaN multiple quantum well structures is discussed. Time integrated and time-resolved photoluminescence measurements and theoretical calculations of the effect of these fields is presented. Furthermore, a description of how these fields influence the carrier dynamics and a discussion of how the piezoelectric field effects the design of GaN/InGaN devices is presented.


1991 ◽  
Vol 48-49 ◽  
pp. 717-720 ◽  
Author(s):  
D. Oberhauser ◽  
H. Kalt ◽  
W. Schlapp ◽  
H. Nickel ◽  
C. Klingshirn

1999 ◽  
Author(s):  
Bo Monemar ◽  
Peder Bergman ◽  
Galina R. Pozina ◽  
J. Dalfors ◽  
B. E. Sernelius ◽  
...  

1993 ◽  
Vol 326 ◽  
Author(s):  
Xuelong Cao ◽  
Ahn Goo Choo ◽  
L. M. Smith ◽  
Howard E. Jackson ◽  
P. Chen ◽  
...  

1989 ◽  
Vol 55 (8) ◽  
pp. 772-774 ◽  
Author(s):  
M. Capizzi ◽  
C. Coluzza ◽  
A. Frova ◽  
U. Cebulla ◽  
A. Forchel

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