Novel photoconductive detector with buried FIB implanted p-doped stripe

Author(s):  
M. Vitzethum ◽  
M. Ruff ◽  
P. Kiesel ◽  
S. Malzer ◽  
G.H. Dohler ◽  
...  
1984 ◽  
Vol 5 (11) ◽  
pp. 1499-1505 ◽  
Author(s):  
N. Oda ◽  
D. Lemke ◽  
J. Wolf

2008 ◽  
Author(s):  
Mitsunobu Kawada ◽  
Hidenori Takahashi ◽  
Noriko Murakami ◽  
Yoko Okada ◽  
Akiko Yasuda ◽  
...  

2011 ◽  
Vol 46 (10) ◽  
pp. 1734-1737 ◽  
Author(s):  
S.S. Shinde ◽  
K.Y. Rajpure

2020 ◽  
Vol 66 (4 Jul-Aug) ◽  
pp. 490
Author(s):  
Wenhao Ding ◽  
Xianquan Meng

Serrated GaN nanowires were synthesized on sapphire substrate by chemical vapor deposition. Copper nanowires were synthesized by liquid-phase reduction method. The surface morphology of GaN and copper nanowires was observed by scanning electron microscopy. An UV detector based on GaN nanowires was prepared with copper nanowires as electrode. The results show that the device is a photoconductive detector. The detector has different response under different wavelength light illumination and has the maximum response under 365nm ultraviolet light. Photocurrent–time characteristics show the detector has good stability over time.


2016 ◽  
Vol 45 (4) ◽  
pp. 0404001
Author(s):  
汪洋 Wang Yang ◽  
刘大福 Liu Dafu ◽  
徐勤飞 Xu Qinfei ◽  
王妮丽 Wang Nili ◽  
李雪 Li Xue ◽  
...  

2019 ◽  
Vol 126 (8) ◽  
pp. 083103
Author(s):  
Ting-Ting Kang ◽  
Ping-Ping Chen

1998 ◽  
Vol 73 (7) ◽  
pp. 963-965 ◽  
Author(s):  
S. Kim ◽  
H. Mohseni ◽  
M. Erdtmann ◽  
E. Michel ◽  
C. Jelen ◽  
...  

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