Empirical Device Scaling and RF Performance Perspective: A Small Signal Model for GaN High Electron Mobility Transistor

2018 ◽  
Author(s):  
Ahmad Khusro ◽  
Mohammad S. Hashmi ◽  
Abdul Quaiyum Ansari
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Small Signal ◽  
Signal Model ◽  
High Electron Mobility ◽  
Device Scaling ◽  
Small Signal Model ◽  
Rf Performance

scholarly journals A new small signal physical model of InP-based composite channel high electron mobility transistor

2006 ◽  
Vol 55 (7) ◽  
pp. 3617
Author(s):  
Li Xiao ◽  
Liu Liang ◽  
Zhang Hai-Ying ◽  
Yin Jun-Jian ◽  
Li Hai-Ou ◽  
...  
Keyword(s):  
Physical Model ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Small Signal ◽  
High Electron Mobility ◽  
Composite Channel

DC and RF performance of an In0.1Ga0.9N/InN high electron mobility transistor

2011 ◽  
Vol 8 (7-8) ◽  
pp. 2292-2295 ◽  
Author(s):  
Sakib M. Muhtadi ◽  
S. M. Sajjad Hossain ◽  
Ashraful G. Bhuiyan ◽  
K. Sugita ◽  
A. Hashimoto ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Rf Performance

Self-Consistent Subband Calculations of AlxGa1-xN/(AlN)/GaN-Based High Electron Mobility Transistor

2010 ◽  
Vol 159 ◽  
pp. 342-347 ◽  
Author(s):  
T.R. Lenka ◽  
A.K. Panda
Keyword(s):  
Conduction Band ◽  
Electron Mobility ◽  
High Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Self Consistent ◽  
Band Profile ◽  
Alloy Disorder ◽  
Rf Performance

In this paper, there is an attempt to present the two dimensional electron gas (2DEG) transport characteristics of AlxGa1-xN/(AlN)/GaN-based High Electron Mobility Transistor (HEMT) using a self-consistent numerical method for calculating the conduction-band profile and subband structure. The subband calculations take into account the piezoelectric and spontaneous polarization effects and the Hartree and exchange-correlation interaction. Here the dependency of conduction band profile, subband energies, 2DEG sheet concentration and sheet resistance on various Al mole fractions of AlxGa1-xN barrier layer are presented by incorporating simulation as well as available experimental data. Introduction of very thin binary AlN layer at the heterojunction of AlxGa1-xN/GaN resulting high mobility at high sheet charge densities by increasing the effective and decreasing alloy disorder scattering. Devices based on this structure exhibit good DC and RF performance as an increase of . Owing to high 2DEG density , the proposed device leads to operate in microwave and millimeter wave applications.

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