Compact modeling solutions and challenges for organic thin-film transistors

Author(s):  
Benjamin Iniguez
2019 ◽  
Vol 66 (5) ◽  
pp. 2370-2374 ◽  
Author(s):  
H. Cortes-Ordonez ◽  
S. Jacob ◽  
F. Mohamed ◽  
G. Ghibaudo ◽  
B. Iniguez

Author(s):  
Benjamin Iniguez ◽  
Josep Pallares ◽  
F. Marsal Lluis ◽  
Alejandra Castro-Carranza ◽  
Antonio Cerdeira ◽  
...  

Author(s):  
K. M. Awawdeh ◽  
J. A. Jimenez Tejada ◽  
J. A. Lopez Villanueva ◽  
J. E. Carceller ◽  
M. J. Deen ◽  
...  

2020 ◽  
Vol 67 (11) ◽  
pp. 5082-5090
Author(s):  
Jakob Pruefer ◽  
Jakob Leise ◽  
Ghader Darbandy ◽  
Aristeidis Nikolaou ◽  
Hagen Klauk ◽  
...  

2017 ◽  
Vol 64 (6) ◽  
pp. 2629-2634 ◽  
Author(s):  
Juan A. Jimenez Tejada ◽  
Pilar Lopez Varo ◽  
Andrew N. Cammidge ◽  
Isabelle Chambrier ◽  
Michael J. Cook ◽  
...  

2021 ◽  
Author(s):  
Jakob Prüfer ◽  
Jakob Leise ◽  
Aristeidis Nikolaou ◽  
James W. Borchert ◽  
Ghader Darbandy ◽  
...  

<div>We present analytical physics-based compact models for the Schottky barriers at the interfaces between the organic semiconductor and the source and drain contacts in organic thin-film transistors (TFTs) fabricated in the coplanar and the staggered device architecture, and we illustrate the effect of these Schottky barriers on the current-voltage characteristics of the TFTs. The model for the source barrier explicitly takes into account the field-dependent barrier lowering due to image charges. Potential solutions have been derived by applying the Schwarz-Christoffel transformation, leading to expressions for the electric field at the source barrier and for the contact resistance at the source contact. With regard to the drain barrier, a generic compact-modeling scheme based on the current-voltage characteristics of a barrier-less TFT is introduced that can be applied to any compact dc model. Finally, both models are incorporated into an existing charge-based compact dc model and verified against the results of measurements performed on coplanar and staggered organic TFTs with channel lengths ranging from 0.5 μm to 10.5 μm.</div>


2021 ◽  
Author(s):  
Jakob Prüfer ◽  
Jakob Leise ◽  
Aristeidis Nikolaou ◽  
James W. Borchert ◽  
Ghader Darbandy ◽  
...  

<div>We present analytical physics-based compact models for the Schottky barriers at the interfaces between the organic semiconductor and the source and drain contacts in organic thin-film transistors (TFTs) fabricated in the coplanar and the staggered device architecture, and we illustrate the effect of these Schottky barriers on the current-voltage characteristics of the TFTs. The model for the source barrier explicitly takes into account the field-dependent barrier lowering due to image charges. Potential solutions have been derived by applying the Schwarz-Christoffel transformation, leading to expressions for the electric field at the source barrier and for the contact resistance at the source contact. With regard to the drain barrier, a generic compact-modeling scheme based on the current-voltage characteristics of a barrier-less TFT is introduced that can be applied to any compact dc model. Finally, both models are incorporated into an existing charge-based compact dc model and verified against the results of measurements performed on coplanar and staggered organic TFTs with channel lengths ranging from 0.5 μm to 10.5 μm.</div>


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