A Low Power Biopotential Amplifier based on Bulk Driven Quasi Floating Gate Technique

2019 ◽  
Author(s):  
Preeti Sharma ◽  
Kulbhushan Sharma ◽  
H. S. Jatana ◽  
Rajnish Sharma
Keyword(s):  
Low Power ◽  
Floating Gate ◽  
Biopotential Amplifier

A 0.09 $\mu$ W Low Power Front-End Biopotential Amplifier for Biosignal Recording

2012 ◽  
Vol 6 (5) ◽  
pp. 508-516 ◽  
Author(s):  
Yuhwai Tseng ◽  
Yingchieh Ho ◽  
Shuoting Kao ◽  
Chauchin Su
Keyword(s):  
Low Power ◽  
Front End ◽  
Biopotential Amplifier

Ultra low-voltage/low-power digital floating-gate circuits

1999 ◽  
Vol 46 (7) ◽  
pp. 930-936 ◽  
Author(s):  
Y. Berg ◽  
D.T. Wisland ◽  
T.S. Lande
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Floating Gate

A Novel Dual-Doping Floating-Gate (DDFG) Flash Memory Featuring Low Power and High Reliability Application

2007 ◽  
Vol 28 (7) ◽  
pp. 622-624 ◽  
Author(s):  
Yan Li ◽  
Ru Huang ◽  
Yimao Cai ◽  
Falong Zhou ◽  
Xiaonan Shan ◽  
...  
Keyword(s):  
Low Power ◽  
Flash Memory ◽  
High Reliability ◽  
Floating Gate

Low Power FGSRAM Cell Using Sleepy and LECTOR Technique

2016 ◽  
Vol 4 (2) ◽  
pp. 333 ◽  
Author(s):  
Kanan Bala Ray ◽  
Sushanta Kumar Mandal ◽  
Shivalal Patro
Keyword(s):  
Low Power ◽  
Power Supply ◽  
High Stability ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Floating Gate ◽  
Power Supply Voltage ◽  
Operation Analysis ◽  
Sram Cell ◽  
Simulation Results

<em>In this paper floating gate MOS (FGMOS) along with sleep transistor technique and leakage control transistor (LECTOR) technique has been used to design low power SRAM cell. Detailed investigation on operation, analysis and result comparison of conventional 6T, FGSRAM, FGSLEEPY, FGLECTOR and FGSLEEPY LECTOR has been done. All the simulations are done in Cadence Virtuoso environment on 45 nm standard CMOS technology with 1 V power supply voltage. Simulation results show that FGSLEEPY LECTOR SRAM cell consumes very low power and achieves high stability compared to conventional FGSRAM Cell</em>

Low-power analogue computational blocks based on high-performance floating-gate MOSFET resistor

2019 ◽  
Vol 106 (5) ◽  
pp. 663-678
Author(s):  
Charu Rana ◽  
Neelofar Afzal ◽  
Dinesh Prasad
Keyword(s):  
Low Power ◽  
High Performance ◽  
Floating Gate

Study of Novel Floating-Gate Oxide Semiconductor Memory Using Indium–Gallium–Zinc Oxide for Low-Power System-on-Panel Applications

2013 ◽  
Vol 52 (9R) ◽  
pp. 094101 ◽  
Author(s):  
Yoshimitsu Yamauchi ◽  
Yoshinari Kamakura ◽  
Yousuke Isagi ◽  
Toshimasa Matsuoka ◽  
Satoshi Malotaux
Keyword(s):  
Zinc Oxide ◽  
Power System ◽  
Low Power ◽  
Gate Oxide ◽  
Floating Gate ◽  
Oxide Semiconductor ◽  
Indium Gallium Zinc Oxide ◽  
Semiconductor Memory ◽  
Low Power System ◽  
Indium Gallium
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