A Low Power Biopotential Amplifier based on Bulk Driven Quasi Floating Gate Technique

Author(s):  
Preeti Sharma ◽  
Kulbhushan Sharma ◽  
H. S. Jatana ◽  
Rajnish Sharma
2012 ◽  
Vol 6 (5) ◽  
pp. 508-516 ◽  
Author(s):  
Yuhwai Tseng ◽  
Yingchieh Ho ◽  
Shuoting Kao ◽  
Chauchin Su

2007 ◽  
Vol 28 (7) ◽  
pp. 622-624 ◽  
Author(s):  
Yan Li ◽  
Ru Huang ◽  
Yimao Cai ◽  
Falong Zhou ◽  
Xiaonan Shan ◽  
...  

Author(s):  
Kanan Bala Ray ◽  
Sushanta Kumar Mandal ◽  
Shivalal Patro

<em>In this paper floating gate MOS (FGMOS) along with sleep transistor technique and leakage control transistor (LECTOR) technique has been used to design low power SRAM cell. Detailed investigation on operation, analysis and result comparison of conventional 6T, FGSRAM, FGSLEEPY, FGLECTOR and FGSLEEPY LECTOR has been done. All the simulations are done in Cadence Virtuoso environment on 45 nm standard CMOS technology with 1 V power supply voltage. Simulation results show that FGSLEEPY LECTOR SRAM cell consumes very low power and achieves high stability compared to conventional FGSRAM Cell</em>


Sign in / Sign up

Export Citation Format

Share Document