Analyzing and Increasing Yield of ZnO Thin-Film Transistors for Large-area Sensing Systems by Preventing Process-Induced Gate Dielectric Breakdown

2019 ◽  
Author(s):  
Zhiwu Zheng ◽  
Levent E. Aygun ◽  
Yoni Mehlman ◽  
Sigurd Wagner ◽  
Naveen Verma ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Dielectric Breakdown ◽  
Zno Thin Film ◽  
Large Area ◽  
Sensing Systems

HfZnO/ZnO Heterostructures Fabricated Using Low-Cost Large-Area Compatible Sputtering Processes

2015 ◽  
Vol 1731 ◽  
Author(s):  
Chih-Hung Li ◽  
Jian-Zhang Chen ◽  
I-Chun Cheng
Keyword(s):  
Thin Film ◽  
Electrical Resistance ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Annealing Temperature ◽  
Low Cost ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Large Area ◽  
Apparent Decrease

ABSTRACTWe investigated the electrical properties of the rf-sputtered HfxZn1-xO/ZnO heterostructures. The thermal annealing on ZnO prior to the HfxZn1-xO deposition greatly influences the properties of the heterostructures. A highly conductive interface formed at the interface between HfxZn1-xO and ZnO thin films as the ZnO annealing temperature exceeded 500°C, leading to the apparent decrease of the electrical resistance. The resistance decreased with an increase of either thickness or Hf content of the HfxZn1-xO capping layer. The Hf0.05Zn0.95O/ZnO heterostructure with a 200-nm-thick 600°C-annealed ZnO exhibits a carrier mobility of 14.3 cm2V-1s-1 and a sheet carrier concentration of 1.93×1013 cm-2; the corresponding values for the bare ZnO thin film are 0.47 cm2V-1s-1 and 2.27×1012 cm-2, respectively. Rf-sputtered HfZnO/ZnO heterostructures can potentially be used to increase the carrier mobility of thin-film transistors in large-area electronics.

High performance self-aligned top-gate ZnO thin film transistors using sputtered Al2O3 gate dielectric

2012 ◽  
Vol 520 (21) ◽  
pp. 6681-6683 ◽  
Author(s):  
Rongsheng Chen ◽  
Wei Zhou ◽  
Meng Zhang ◽  
Hoi Sing Kwok
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Dielectric ◽  
Zno Thin Film ◽  
Al2o3 Gate Dielectric

High-performance ZnO thin film transistors with sputtering SiO2/Ta2O5/SiO2 multilayer gate dielectric

2010 ◽  
Vol 518 (21) ◽  
pp. 6130-6133 ◽  
Author(s):  
L. Zhang ◽  
J. Li ◽  
X.W. Zhang ◽  
X.Y. Jiang ◽  
Z.L. Zhang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Dielectric ◽  
Zno Thin Film

Direct photopatternable organic–inorganic hybrid gate dielectric for solution-processed flexible ZnO thin film transistors

2011 ◽  
Vol 21 (32) ◽  
pp. 11879 ◽  
Author(s):  
Yangho Jung ◽  
Taewhan Jun ◽  
Areum Kim ◽  
Keunkyu Song ◽  
Tae Hoon Yeo ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Zno Thin Film ◽  
Solution Processed ◽  
Inorganic Hybrid

Development of ZnO Thin Film Transistors Based on SiN/Al2O3 Gate Dielectric Materials

2011 ◽  
Vol 58 (3) ◽  
pp. 487-491 ◽  
Author(s):  
Eui-Jung Yun ◽  
Young-Wook Song ◽  
Hyoung G. Nam ◽  
Nam-Ihn Cho ◽  
Myunghee Jung
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Dielectric Materials ◽  
Zno Thin Film ◽  
Al2o3 Gate Dielectric

Low-Temperature Deposition of Inorganic–Organic HfO2–PMMA Hybrid Gate Dielectric Layers for High-Mobility ZnO Thin-Film Transistors

2019 ◽  
Vol 1 (6) ◽  
pp. 1003-1011 ◽  
Author(s):  
Gouri Syamala Rao Mullapudi ◽  
Gonzalo Alonso Velazquez-Nevarez ◽  
Carlos Avila-Avendano ◽  
Jorge Alejandro Torres-Ochoa ◽  
Manuel Angel Quevedo-López ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
High Mobility ◽  
Zno Thin Film ◽  
Dielectric Layers ◽  
Low Temperature Deposition ◽  
Temperature Deposition
Sign in / Sign up

Export Citation Format

Share Document