The method of determining the duration of transients in semiconductor devices for current-voltage characteristics measurement

Author(s):  
Ievgen O. Iermolenko ◽  
Oleksandr F. Bondarenko ◽  
Kristina I. Iermolenko
2014 ◽  
Vol 1016 ◽  
pp. 521-525 ◽  
Author(s):  
V.V. Shurenkov

The electronic systems of aerospace techniques include power microwave devices and analog and digital semiconductor devices. The radiation of power microwave devices may effect on the semiconductor devices. So it’s necessary to know the electromagnetic effects of this radiation on the semiconductor devices. The electromagetic effects of the microwave radiation exposure on the semiconductor diodes, the main part of any semiconductor devices, are considered. The changes of current – voltage characteristics of the diodes are explained, outgoing from the model of the recombination of carriers through deep energy level recombination center in forbidden gap induced by microwave radiation field.


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