Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors
2006 ◽
Vol 50
(3)
◽
pp. 333-339
◽
1996 ◽
Vol 35
(Part 1, No. 6A)
◽
pp. 3343-3349
◽
1991 ◽
pp. 669-674
1999 ◽
Vol 38
(Part 1, No. 2B)
◽
pp. 1200-1203
◽