Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs

2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2012.6343336 ◽

2012 ◽

Cited By ~ 10

Author(s):

M. Koyama ◽

M. Casse ◽

R. Coquand ◽

S. Barraud ◽

H. Iwai ◽

...

Keyword(s):

Carrier Transport ◽

Si Nanowire ◽

Nanowire Mosfets

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Analysis of Carrier Transport in Trigate Si Nanowire MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2011.2115247 ◽

2011 ◽

Vol 58 (5) ◽

pp. 1336-1343 ◽

Cited By ~ 4

Author(s):

Wei-Ting Lai ◽

Chia-Wei Wu ◽

Cheng-Chih Lin ◽

Pei-Wen Li

Keyword(s):

Carrier Transport ◽

Si Nanowire ◽

Nanowire Mosfets

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A compact modeling of Si nanowire MOSFETs

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2010.5667451 ◽

2010 ◽

Author(s):

Kenji Natori

Keyword(s):

Compact Modeling ◽

Si Nanowire ◽

Nanowire Mosfets

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Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully Three-Dimensional NEGF Simulation Study

IEEE Transactions on Electron Devices ◽

10.1109/ted.2010.2048405 ◽

2010 ◽

Vol 57 (7) ◽

pp. 1626-1635 ◽

Cited By ~ 37

Author(s):

Antonio Martinez ◽

Natalia Seoane ◽

Andrew R. Brown ◽

John R. Barker ◽

Asen Asenov

Keyword(s):

Simulation Study ◽

Three Dimensional ◽

Interface Roughness ◽

Combined Effect ◽

Si Nanowire ◽

Nanowire Mosfets ◽

Random Dopants

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Low-frequency noise reduction in Si Nanowire MOSFETs

ECS Meeting Abstracts ◽

10.1149/ma2012-01/16/740 ◽

2012 ◽

Keyword(s):

Noise Reduction ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Si Nanowire ◽

Nanowire Mosfets

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Impacts of orientation and cross-sectional shape on hole mobility of Si nanowire MOSFETs

2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2015.7158572 ◽

2015 ◽

Author(s):

Hiroaki Fujihara ◽

Naoya Morioka ◽

Hajime Tanaka ◽

Jun Suda ◽

Tsunenobu Kimoto

Keyword(s):

Hole Mobility ◽

Cross Sectional ◽

Si Nanowire ◽

Nanowire Mosfets ◽

Sectional Shape

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Impact of Quantum Effect on Diffusion Layer Resistance of Si Nanowire MOSFETs

10.7567/ssdm.2008.h-5-2 ◽

2008 ◽

Author(s):

D. Hagishima ◽

K. Matsuzawa ◽

S. Odanaka

Keyword(s):

Diffusion Layer ◽

Quantum Effect ◽

Si Nanowire ◽

Layer Resistance ◽

Nanowire Mosfets

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A multi-subband Monte Carlo study on dominance of scattering mechanisms over carrier transport in sub-10-nm Si nanowire FETs

nano Online ◽

10.1515/nano.s11671-016-1249-4 ◽

2017 ◽

Author(s):

Hoon Ryu

Keyword(s):

Monte Carlo ◽

Carrier Transport ◽

Monte Carlo Study ◽

Si Nanowire ◽

Scattering Mechanisms

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Multi-Subband Ensemble Monte Carlo simulation of Si nanowire MOSFETs

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2015.7292332 ◽

2015 ◽

Cited By ~ 5

Author(s):

Luca Donetti ◽

Carlos Sampedro ◽

Francisco Gamiz ◽

Andres Godoy ◽

Francisco J. Garcia-Ruiz ◽

...

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Si Nanowire ◽

Ensemble Monte Carlo ◽

Ensemble Monte Carlo Simulation ◽

Nanowire Mosfets

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Systematic understanding of self-heating effects in tri-gate nanowire MOSFETs considering device geometry and carrier transport

2011 International Electron Devices Meeting ◽

10.1109/iedm.2011.6131597 ◽

2011 ◽

Cited By ~ 8

Author(s):

Kensuke Ota ◽

Masumi Saitoh ◽

Chika Tanaka ◽

Yukio Nakabayashi ◽

Toshinori Numata

Keyword(s):

Carrier Transport ◽

Self Heating ◽

Heating Effects ◽

Nanowire Mosfets ◽

Device Geometry ◽

Systematic Understanding

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Subthreshold Kink Effect Revisited and Optimized for Si Nanowire MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2015.2512660 ◽

2016 ◽

Vol 63 (3) ◽

pp. 903-909 ◽

Cited By ~ 5

Author(s):

Chun-Yu Chen ◽

Jyi-Tsong Lin ◽

Meng-Hsueh Chiang

Keyword(s):

Si Nanowire ◽

Kink Effect ◽

Nanowire Mosfets

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