High efficiency AlGaAs/GaAs power HBTs at a low supply voltage for digital cellular phones

Author(s):  
T. Miura ◽  
T. Shimura ◽  
K. Mori ◽  
Y. Uneme ◽  
H. Nakano ◽  
...  
2000 ◽  
Vol 47 (12) ◽  
pp. 2385-2391 ◽  
Author(s):  
H. Iwai ◽  
Y. Katsumata ◽  
H.S. Momose ◽  
T. Morimoto ◽  
T. Yoshitomi ◽  
...  

Author(s):  
AAMNA ANIL ◽  
RAVI KUMAR SHARMA

A charge pump is a kind of DC to DC converter that uses capacitors as energy storage elements to create a higher or lower voltage power source. Charge pumps make use of switching devices for controlling the connection of voltage to the capacitor. Charge pumps have been used in the nonvolatile memories, such as EEPROM and Flash memories, for the programming of the floating-gate devices. They can also be used in the low-supply-voltage switched-capacitor systems that require high voltage to drive the analog switched. This paper includes voltage analysis of different charge pumps. On the basis of voltage analysis a new charge pump is proposed.


Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 1078
Author(s):  
Thi Thuy Pham ◽  
Dongmin Kim ◽  
Seo-Hyeong Jeong ◽  
Junghyup Lee ◽  
Donggu Im

This work presents a high efficiency RF-to-DC conversion circuit composed of an LC-CL balun-based Gm-boosting envelope detector, a low noise baseband amplifier, and an offset canceled latch comparator. It was designed to have high sensitivity with low power consumption for wake-up receiver (WuRx) applications. The proposed envelope detector is based on a fully integrated inductively degenerated common-source amplifier with a series gate inductor. The LC-CL balun circuit is merged with the core of the envelope detector by sharing the on-chip gate and source inductors. The proposed technique doubles the transconductance of the input transistor of the envelope detector without any extra power consumption because the gate and source voltage on the input transistor operates in a differential mode. This results in a higher RF-to-DC conversion gain. In order to improve the sensitivity of the wake-up radio, the DC offset of the latch comparator circuit is canceled by controlling the body bias voltage of a pair of differential input transistors through a binary-weighted current source cell. In addition, the hysteresis characteristic is implemented in order to avoid unstable operation by the large noise at the compared signal. The hysteresis window is programmable by changing the channel width of the latch transistor. The low noise baseband amplifier amplifies the output signal of the envelope detector and transfers it into the comparator circuit with low noise. For the 2.4 GHz WuRx, the proposed envelope detector with no external matching components shows the simulated conversion gain of about 16.79 V/V when the input power is around the sensitivity of −60 dBm, and this is 1.7 times higher than that of the conventional envelope detector with the same current and load. The proposed RF-to-DC conversion circuit (WuRx) achieves a sensitivity of about −65.4 dBm based on 45% to 55% duty, dissipating a power of 22 μW from a 1.2 V supply voltage.


1992 ◽  
Vol 27 (4) ◽  
pp. 583-588 ◽  
Author(s):  
Y. Miyawaki ◽  
T. Nakayama ◽  
S. Kobayashi ◽  
N. Ajika ◽  
M. Ohi ◽  
...  

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