Omnidirectional Reflection of Light Waves On Si/SiO2 Multilayer Films

Author(s):  
Z. Wang ◽  
R. W. Peng ◽  
Z. H. Tang ◽  
W. H. Sun ◽  
Z. J. Zhang ◽  
...  
2016 ◽  
Vol 24 (4) ◽  
pp. 279-281
Author(s):  
A. F. Bunkin ◽  
V. G. Mikhalevich ◽  
S. M. Pershin ◽  
V. N. Streltsov

2005 ◽  
Vol 48 (5) ◽  
pp. 476-479
Author(s):  
M. A. Lotonov ◽  
S. I. Donchenko ◽  
V. N. Fedotov

Author(s):  
Amanda K. Petford-Long ◽  
A. Cerezo ◽  
M.G. Hetherington

The fabrication of multilayer films (MLF) with layer thicknesses down to one monolayer has led to the development of materials with unique properties not found in bulk materials. The properties of interest depend critically on the structure and composition of the films, with the interfacial regions between the layers being of particular importance. There are a number of magnetic MLF systems based on Co, several of which have potential applications as perpendicular magnetic (e.g Co/Cr) or magneto-optic (e.g. Co/Pt) recording media. Of particular concern are the effects of parameters such as crystallographic texture and interface roughness, which are determined by the fabrication conditions, on magnetic properties and structure.In this study we have fabricated Co-based MLF by UHV thermal evaporation in the prechamber of an atom probe field-ion microscope (AP). The multilayers were deposited simultaneously onto cobalt field-ion specimens (for AP and position-sensitive atom probe (POSAP) microanalysis without exposure to atmosphere) and onto the flat (001) surface of oxidised silicon wafers (for subsequent study in cross-section using high-resolution electron microscopy (HREM) in a JEOL 4000EX. Deposi-tion was from W filaments loaded with material in the form of wire (Co, Fe, Ni, Pt and Au) or flakes (Cr). The base pressure in the chamber was around 8×10−8 torr during deposition with a typical deposition rate of 0.05 - 0.2nm/s.


1989 ◽  
Vol 159 (9) ◽  
pp. 155 ◽  
Author(s):  
Boris M. Bolotovskii ◽  
S.N. Stolyarov
Keyword(s):  

1997 ◽  
Vol 473 ◽  
Author(s):  
H. S. Yang ◽  
F. R. Brotzen ◽  
D. L. Callahan ◽  
C. F. Dunn

ABSTRACTQuantitative measurement of the adhesion strength of thin film metallizations has been achieved by a novel technique employing electrostatic forces to generate delaminating stresses. This technique has been used in testing the adhesion of Al-Cu, Cu, and Al multilayer films deposited on Si. Micro-blister-type failure is revealed by scanning electron microscopy. The delamination process and the geometry of the blister are discussed. The measured adhesion data fit a Weibull distribution function.


PIERS Online ◽  
2005 ◽  
Vol 1 (6) ◽  
pp. 650-653 ◽  
Author(s):  
Augusto Garcia-Valenzuela ◽  
Sanchez-Perez Celia ◽  
Alejandro Reyes-Coronado ◽  
Ruben Gerardo Barrera Perez

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