Electromechanical modeling and characterization of the electrical breakdown for the capacitive microarrayed ultrasonic transducers

Author(s):  
Te-I Chiu ◽  
Shi-Bing Luo ◽  
Tsai-Chu Hsiao
2005 ◽  
Vol 892 ◽  
Author(s):  
Qianghua Wang ◽  
Jianzeng Xu ◽  
Changhe Huang ◽  
Gregory W Auner

AbstractThis paper reports the fabrication and characterization of micromachined ultrasonic transducers (MUT) based on piezoelectric aluminum nitride (AlN) thin films. The MUT device is composed of an Al/AlN/Al sandwiched structure overlaid on top of a silicon (Si) diaphragm. X-ray diffraction (XRD) scan shows that highly c-axis oriented AlN (002) thin films have been grown on Al/Si(100) substrates. Electrical impedance of the MUT devices is analyzed as a function of frequency. The fundamental resonant frequencies of the devices are found in the range of 65-70 kHz, which are in approximation to the theoretical calculation. The effective coupling factors of the devices are also derived as 0.18.


2018 ◽  
Vol 47 (2) ◽  
pp. 213-232
Author(s):  
Francesc Suñol ◽  
Diego A. Ochoa ◽  
Laura R. Suñé ◽  
Jose E. García

2003 ◽  
Vol 54 (1) ◽  
pp. 557-564 ◽  
Author(s):  
Jacek Baborowski ◽  
Nicolas Ledermann ◽  
Paul Muralt ◽  
Daniel Schmitt

Biomaterials ◽  
1986 ◽  
Vol 7 (6) ◽  
pp. 432-437 ◽  
Author(s):  
Surendra Singh ◽  
Harcharan Singh Ranu

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