Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs

2002 ◽  
Author(s):  
K. Uchida ◽  
J. Koga ◽  
R. Ohba ◽  
T. Numata ◽  
S.I. Takagi
Keyword(s):  
Threshold Voltage ◽  
Quantum Mechanical ◽  
Mechanical Effects ◽  
Low Field ◽  
Field Mobility ◽  
Quantum Mechanical Effects ◽  
Low Field Mobility

A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects

2008 ◽  
Vol 48 (1) ◽  
pp. 23-28
Author(s):  
J.P. Xu ◽  
Y.P. Li ◽  
P.T. Lai ◽  
W.B. Chen ◽  
S.G. Xu ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Quantum Mechanical ◽  
Mechanical Effects ◽  
Quantum Mechanical Effects ◽  
Threshold Voltage Model

scholarly journals On the Variability of the Low-Frequency Noise in UTBOX SOI nMOS-FETs

2013 ◽  
Vol 8 (2) ◽  
pp. 71-77
Author(s):  
Eddy Simoen ◽  
Maria G. C. Andrade ◽  
Luciano M. Almeida ◽  
M. Aoulaiche ◽  
C. Caillat ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Silicon Film ◽  
Low Frequency ◽  
Drain Current ◽  
Silicon On Insulator ◽  
Current Fluctuations ◽  
Frequency Noise ◽  
Low Field ◽  
Field Mobility ◽  
Low Field Mobility

The variability of the low-frequency (LF) noise in n-channel MOSFETs fabricated on an Ultra-Thin Buried Oxide (UTBOX) Silicon-on-Insulator (SOI) substrate has been studied and compared with the variability in the threshold voltage and low-field mobility of the same devices. No correlation has been found between the noise magnitude and the DC parameters, suggesting that the traps responsible for the current fluctuations do not affect the latter. A possible explanation is that the LF noise is dominated by Generation-Recombination (GR) centers in the silicon film, which have less impact on the drain current.

Quantum-mechanical effects on the threshold voltage of ultrathin-SOI nMOSFETs

1993 ◽  
Vol 14 (12) ◽  
pp. 569-571 ◽  
Author(s):  
Y. Omura ◽  
S. Horiguchi ◽  
M. Tabe ◽  
K. Kishi
Keyword(s):  
Threshold Voltage ◽  
Quantum Mechanical ◽  
Mechanical Effects ◽  
Quantum Mechanical Effects ◽  
Ultrathin Soi

scholarly journals 2-D threshold voltage model for short-channel MOSFET with quantum-mechanical effects

2006 ◽  
Vol 55 (7) ◽  
pp. 3670
Author(s):  
Li Yan-Ping ◽  
Xu Jing-Ping ◽  
Chen Wei-Bing ◽  
Xu Sheng-Guo ◽  
Ji Feng
Keyword(s):  
Threshold Voltage ◽  
Quantum Mechanical ◽  
Short Channel ◽  
Mechanical Effects ◽  
Quantum Mechanical Effects ◽  
Threshold Voltage Model

Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layers

1997 ◽  
Vol 18 (5) ◽  
pp. 206-208 ◽  
Author(s):  
G. Chindalore ◽  
S.A. Hareland ◽  
S.A. Jallepalli ◽  
A.F. Tasch ◽  
C.M. Maziar ◽  
...  
Keyword(s):  
Experimental Determination ◽  
Threshold Voltage ◽  
Quantum Mechanical ◽  
Mechanical Effects ◽  
Quantum Mechanical Effects
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