Reduction in Leakage Current of 20 nm Gate Length SiGe On-Insulator PMOSFET by Altering Source/Drain Potential Using Tubs Under Source/Drain Regions

2021 ◽  
Author(s):  
Sanjay Sharma ◽  
Varun Goel
Keyword(s):  
Leakage Current ◽  
Gate Length ◽  
20 Nm

Sub-20 nm gate length FinFET design: Can high-κ spacers make a difference?

2008 ◽  
Author(s):  
Angada B. Sachid ◽  
Roswald Francis ◽  
Maryam Shojaei Baghini ◽  
Dinesh K. Sharma ◽  
Karl-Heinz Bach ◽  
...  
Keyword(s):  
Gate Length ◽  
20 Nm

Investigation of the effect of doping the GaN buffer layer with carbon on the avalanche breakdown effect of normally open HEMT AlGaN/AlN/GaN transistors

2021 ◽  
Author(s):  
Than Phyo Kyaw
Keyword(s):  
Buffer Layer ◽  
Layer Thickness ◽  
Breakdown Voltage ◽  
Carbon Doping ◽  
Avalanche Breakdown ◽  
Gate Length ◽  
20 Nm ◽  
Gan Buffer Layer ◽  
Effect Of Doping

The influence of the GaN buffer layer doped with carbon on the avalanche breakdown effect of normally open HEMT AlGaN / AlN / GaN transistors was studied. The avalanche breakdown was simulated in a structure where the gate length is LG = 0.3 mkm, the distance between the source and gate is LSG = 1.5 mkm, and the distance between the gate and drain is LGD = 2.2 mkm. For modeling, consider a layer doped with carbon, the thickness of which is 0.3 mkm, and the layer is located at a distance of 20 nm from the channel. The Simulation showed that with an increase in the concentration of carbon doping of the buffer, the breakdown voltage increases in the range UB = 225 – 360 (V). When the layer thickness changes to 0.4 mkm, the breakdown voltage increases in the range UB = 230 – 446 (V). For a structure where the gate length is LG = 0.8 mkm, the distance between the source and the gate is LSG = 1.0 mkm, the distance between the gate and drain is LGD = 3.0 mkm, the breakdown voltage increases in the range UB = 300 – 622 (V).

Simulation Study of Performance for a 20-nm Gate Length In$_{\bf 0.53}$Ga$_{\bf 0.47}$As Implant Free Quantum Well MOSFET

2012 ◽  
Vol 11 (4) ◽  
pp. 808-817 ◽  
Author(s):  
Brahim Benbakhti ◽  
Antonio Martinez ◽  
Karol Kalna ◽  
Geert Hellings ◽  
Geert Eneman ◽  
...  
Keyword(s):  
Quantum Well ◽  
Simulation Study ◽  
Gate Length ◽  
20 Nm

Highly Reliable Metal Gate nMOSFETs by Improved CVD-WSix films with Work Function of 4.3eV

2004 ◽  
Vol 811 ◽  
Author(s):  
Kazuaki Nakajima ◽  
Hiroshi Nakazawa ◽  
Katsuyuki Sekine ◽  
Kouji Matsuo ◽  
Tomohiro Saito ◽  
...  
Keyword(s):  
Work Function ◽  
Leakage Current ◽  
Power Supply ◽  
Supply Voltage ◽  
Gate Length ◽  
Gate Electrode ◽  
Metal Gate ◽  
Power Supply Voltage ◽  
Drive Current

ABSTRACTIn this paper, we first propose an improved CVD-WSix metal gate suitable for use with nMOSFETs. Work function of CVD-WSi3.9 gate estimated from C-V measurements was 4.3eV. The nMOSFET using CVD-WSi3.9 gate electrode showed that Vth variation of L/W=1 μm/10μm nMOSFETs can be suppressed to be lower than 8mV in 22chip. In CVD-WSi3.9 gate MOSFETs with gate length of 50nm, a drive current of 636μA/μm was achieved for off-state leakage current of 35nA/μm at 1.0V of power supply voltage. By using CVD-WSi3.9 gate electrode, highly reliable metal gate nMOSFETs can be realized.

scholarly journals Scaling Behavior of Sub-100 nm InAlN/GaN HEMTs on Silicon for RF Applications

2021 ◽  
Author(s):  
Peng Cui ◽  
Yuping Zeng
Keyword(s):  
Cutoff Frequency ◽  
Equivalent Circuit Model ◽  
Scaling Behavior ◽  
Gate Length ◽  
High Electron ◽  
Intrinsic Parameters ◽  
Gan Hemt ◽  
Gan Hemts ◽  
Rf Applications ◽  
20 Nm

Abstract Due to the low cost and the scaling capability of Si substrate, InAlN/GaN high-electron-mobility transistors (HEMTs) on silicon substrate have attracted more and more attentions. In this paper, a high-performance 50-nm-gate-length InAlN/GaN HEMT on Si with a high on/off current (Ion/Ioff) ratio of 7.28 × 106, an average subthreshold swing (SS) of 72 mV/dec, a low drain-induced barrier lowing (DIBL) of 88 mV, an off-state three-terminal breakdown voltage (BVds) of 36 V, a current/power gain cutoff frequency (fT/fmax) of 140/215 GHz, and a Johnson’s figure-of-merit (JFOM) of 5.04 THz∙V is simultaneously demonstrated. The device extrinsic and intrinsic parameters are extracted using equivalent circuit model, which is verified by the good agreement between simulated and measured S-parameter values. Then the scaling behavior of InAlN/GaN HEMTs on Si is predicted using the extracted extrinsic and intrinsic parameters of devices with different gate lengths (Lg). It presents that a fT/fmax of 230/327 GHz can be achieved when Lg­ scales down to 20 nm with the technology developed in the study, and an improved fT/fmax of 320/535 GHz can be achieved on a 20-nm-gate-length InAlN/GaN HEMT with regrown ohmic contact technology and 30% decreased parasitic capacitance. This study confirms the feasibility of further improvement of InAlN/GaN HEMTs on Si for RF applications.

Junctionless Tunneling Nanowire for Steep Subthreshold Slope

2018 ◽  
Vol 24 (8) ◽  
pp. 5695-5699
Author(s):  
Jackuline Moni ◽  
T. Jaspar Vinitha Sundari
Keyword(s):  
Doping Concentration ◽  
Gate Length ◽  
Subthreshold Slope ◽  
Operational Parameters ◽  
Channel Diameter ◽  
Tunneling Mechanism ◽  
20 Nm ◽  
First Time ◽  
Steep Subthreshold Slope ◽  
Tcad Simulations

Using standardized simulations, we report a meticulous learning of the Junctionless nanowire with tunneling mechanism and the dependence of Subthreshold slope on operational parameters by varying the channel diameter, Gate length and doping concentration using Synopsys Sentaurus TCAD simulations. For the first time, Junctionless Nanowire in the company of tunneling architecture is proposed and explored. Our simulation study shows that a decrease in channel diameter and doping concentration results in higher band to band generation and steeper slope. Junctionless tunneling nanowire of diameter 10 nm, gate length of 20 nm, and uniform doping concentration of 1e19 cm−3 obtains steepest Subthreshold swing of about 8 mV/dec (point) and 52 mV/dec (average), an on/off current ratio of 1010, on current of 10−5 A/um.

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