Engineering the optical constants of sputtered amorphous silicon films by crystallization with rapid thermal annealing

2013 ◽  
Author(s):  
Mohammad Shyiq Amin ◽  
Nader Hozhabri ◽  
Robert Magnusson
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Optical Constants ◽  
Silicon Films

Microstructure of Poly-Si Obtained by Rapid Thermal Annealing of Amorphous Silicon Films

1994 ◽  
Vol 37-38 ◽  
pp. 287-292 ◽  
Author(s):  
J. Stoemenos ◽  
N.A. Economou ◽  
L. Haji ◽  
M. Bonnel ◽  
N. Duhamel ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Films

Solid-phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing

1998 ◽  
Vol 135 (1-4) ◽  
pp. 205-208 ◽  
Author(s):  
Yongqian Wang ◽  
Xianbo Liao ◽  
Zhixun Ma ◽  
Guozhen Yue ◽  
Hongwei Diao ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Silicon Films ◽  
Solid Phase Crystallization ◽  
Dopant Activation

Lateral Solid Phase Recrystallization from the Crystal Seed in Ge-Ion-Implanted Amorphous Silicon Films by Repetition Rapid Thermal Annealing

2001 ◽  
Vol 40 (Part 1, No. 4A) ◽  
pp. 2150-2154 ◽  
Author(s):  
Jin-Wook Seo ◽  
Yoshitaka Kokubo ◽  
Yoichiro Aya ◽  
Tomoyuki Nohda ◽  
Hiroki Hamada ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Silicon Films ◽  
Phase Recrystallization ◽  
Crystal Seed ◽  
Ion Implanted

Crystallization of amorphous silicon films by photon-involved rapid thermal annealing

2017 ◽  
Vol 50 (43) ◽  
pp. 435303 ◽  
Author(s):  
NuoFu Chen ◽  
Quanli Tao ◽  
Lishuai Wei ◽  
Yiming Bai ◽  
Jikun Chen
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Films

Rapid thermal recrystallization of amorphous silicon films

1997 ◽  
Vol 12 (10) ◽  
pp. 2511-2514 ◽  
Author(s):  
G. D. Beshkov ◽  
D. B. Dimitrov ◽  
V. Lazarova ◽  
J. Koprinarova ◽  
K. Gesheva ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon ◽  
Rf Sputtering ◽  
Silicon Wafers ◽  
Silicon Films ◽  
Structure Morphology ◽  
Sputtering System

In this work the properties of polycrystalline silicon layers obtained by rapid thermal annealing have been discussed. Amorphous silicon layers with thickness of 3000 Å have been deposited on silicon wafers in rf sputtering system. The layers were annealed for 15 s to 5 min at temperatures in the range 800–1200 °C in vacuum 5 × 10−5 Torr. A correlation was established between structure, morphology, sheet resistance, and the parameters of the RTA annealing.

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