Device Engineering Strategy of Zr-Doped HfOx Ferroelectric Memory for Unconventional Computing Applications

2021 ◽  
Author(s):  
Jiyong Woo
Keyword(s):  
Unconventional Computing ◽  
Engineering Strategy ◽  
Ferroelectric Memory ◽  
Device Engineering

Constraints

2012 ◽  
Vol 3 (2) ◽  
pp. 33-68 ◽  
Author(s):  
Raúl Mazo ◽  
Camille Salinesi ◽  
Daniel Diaz ◽  
Olfa Djebbi ◽  
Alberto Lora-Michiels
Keyword(s):  
Domain Engineering ◽  
Product Line ◽  
The Other ◽  
Feature Model ◽  
Product Configuration ◽  
Constraint Program ◽  
Engineering Strategy ◽  
Application Engineering ◽  
The One ◽  
Line Engineering

Drawing from an analogy between features based Product Line (PL) models and Constraint Programming (CP), this paper explores the use of CP in the Domain Engineering and Application Engineering activities that are put in motion in a Product Line Engineering strategy. Specifying a PL as a constraint program instead of a feature model carries out two important qualities of CP: expressiveness and direct automation. On the one hand, variables in CP can take values over boolean, integer, real or even complex domains and not only boolean values as in most PL languages such as the Feature-Oriented Domain Analysis (FODA). Specifying boolean, arithmetic, symbolic and reified constraint, provides a power of expression that spans beyond that provided by the boolean dependencies in FODA models. On the other hand, PL models expressed as constraint programs can directly be executed and analyzed by off-the-shelf solvers. This paper explores the issues of (a) how to specify a PL model using CP, including in the presence of multi-model representation, (b) how to verify PL specifications, (c) how to specify configuration requirements, and (d) how to support the product configuration activity. Tests performed on a benchmark of 50 PL models show that the approach is efficient and scales up easily to very large and complex PL specifications.

scholarly journals Photocontrolled Strain in Polycrystalline Ferroelectrics via Domain Engineering Strategy

2021 ◽  
Author(s):  
Fernando Rubio-Marcos ◽  
Adolfo Del Campo ◽  
Jonathan Ordoñez-Pimentel ◽  
Michel Venet ◽  
Rocío Estefanía Rojas-Hernandez ◽  
...  
Keyword(s):  
Domain Engineering ◽  
Engineering Strategy

High speed, nondestructive readout from thin‐film ferroelectric memory

1992 ◽  
Vol 60 (26) ◽  
pp. 3319-3321 ◽  
Author(s):  
Sarita Thakoor
Keyword(s):  
Thin Film ◽  
High Speed ◽  
Ferroelectric Memory

SrBi2Ta2O9 has only two polar axes – a problem for high density ferroelectric memory devices

2001 ◽  
Vol 119 (3) ◽  
pp. 117-119 ◽  
Author(s):  
K Franke ◽  
G Martin ◽  
M Weihnacht ◽  
A.V Sotnikov
Keyword(s):  
High Density ◽  
Memory Devices ◽  
Ferroelectric Memory
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