Modeling the small signal characteristics of an ALD Al2O3 insulated-gate AlN/GaN high electron mobility transistor

2009 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2009.5378281 ◽

2009 ◽

Author(s):

D.A. Deen ◽

J.G. Champlain ◽

D.F. Storm ◽

D.J. Meyer ◽

S.C. Binari ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Small Signal ◽

High Electron Mobility ◽

Signal Characteristics

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A new small signal physical model of InP-based composite channel high electron mobility transistor

Acta Physica Sinica ◽

10.7498/aps.55.3617 ◽

2006 ◽

Vol 55 (7) ◽

pp. 3617

Author(s):

Li Xiao ◽

Liu Liang ◽

Zhang Hai-Ying ◽

Yin Jun-Jian ◽

Li Hai-Ou ◽

...

Keyword(s):

Physical Model ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Small Signal ◽

High Electron Mobility ◽

Composite Channel

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Small signal behavioral modeling technique of GaN high electron mobility transistor using artificial neural network: An accurate, fast, and reliable approach

International Journal of RF and Microwave Computer-Aided Engineering ◽

10.1002/mmce.22112 ◽

2019 ◽

Vol 30 (4) ◽

Author(s):

Ahmad Khusro ◽

Saddam Husain ◽

Mohammad S. Hashmi ◽

Abdul Quaiyum Ansari

Keyword(s):

Neural Network ◽

Artificial Neural Network ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Behavioral Modeling ◽

Modeling Technique ◽

High Electron ◽

Small Signal ◽

High Electron Mobility ◽

Artificial Neural

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High-frequency small-signal and large-signal characteristics of resonant tunneling high electron mobility transistors (RTHEMTs)

IEEE Transactions on Electron Devices ◽

10.1109/16.641380 ◽

1997 ◽

Vol 44 (11) ◽

pp. 2038-2040 ◽

Author(s):

K.J. Chen ◽

K. Maezawa ◽

M. Yamamoto

Keyword(s):

Electron Mobility ◽

High Frequency ◽

Resonant Tunneling ◽

High Electron Mobility Transistors ◽

High Electron ◽

Small Signal ◽

Large Signal ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Signal Characteristics

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High electron mobility transistor small signal model

2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843) ◽

10.1109/crmico.2004.183145 ◽

2004 ◽

Author(s):

P.A. Yemtsev ◽

I.K. Sunduchkov ◽

K.S. Sunduchkov ◽

B.N. Shelkovnikov

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Small Signal ◽

Signal Model ◽

High Electron Mobility ◽

Small Signal Model

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Empirical Device Scaling and RF Performance Perspective: A Small Signal Model for GaN High Electron Mobility Transistor

2018 International Conference on Computing and Network Communications (CoCoNet) ◽

10.1109/coconet.2018.8476895 ◽

2018 ◽

Author(s):

Ahmad Khusro ◽

Mohammad S. Hashmi ◽

Abdul Quaiyum Ansari

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Small Signal ◽

Signal Model ◽

High Electron Mobility ◽

Device Scaling ◽

Small Signal Model ◽

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Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states

Journal of Applied Physics ◽

10.1063/1.4905945 ◽

2015 ◽

Vol 117 (2) ◽

pp. 024506 ◽

Author(s):

M. Capriotti ◽

P. Lagger ◽

C. Fleury ◽

M. Oposich ◽

O. Bethge ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

Interface States ◽

High Electron ◽

Small Signal ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Signal Response ◽

Barrier Resistance

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Small-signal and large-signal characteristics of resonant tunneling high electron mobility transistors (RTHEMTs)

Proceedings of 1997 Asia-Pacific Microwave Conference ◽

10.1109/apmc.1997.654595 ◽

2002 ◽

Author(s):

K.J. Chen

Keyword(s):

Electron Mobility ◽

Resonant Tunneling ◽

High Electron Mobility Transistors ◽

High Electron ◽

Small Signal ◽

Large Signal ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Signal Characteristics

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A small-signal equivalent circuit for the high electron mobility transistor

[Proceedings] 1992 IEEE International Symposium on Circuits and Systems ◽

10.1109/iscas.1992.230250 ◽

2003 ◽

Author(s):

M. Saleh ◽

M. El Nokali

Keyword(s):

Equivalent Circuit ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Small Signal ◽

High Electron Mobility

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2‐mm‐gate‐periphery GaN high electron mobility transistor s on SiC and Si substrates: A comparative analysis from a small‐signal standpoint

International Journal of RF and Microwave Computer-Aided Engineering ◽

10.1002/mmce.22642 ◽

2021 ◽

Author(s):

Anwar Jarndal ◽

Mohammad Abdul Alim ◽

Antonio Raffo ◽

Giovanni Crupi

Keyword(s):

Comparative Analysis ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Small Signal ◽

High Electron Mobility ◽

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Improved small‐signal hybrid parameter‐extraction technique for AlGaN / GaN high electron mobility transistors

International Journal of RF and Microwave Computer-Aided Engineering ◽

10.1002/mmce.22562 ◽

2021 ◽

Author(s):

Xuekun Du ◽

Mohamed Helaoui ◽

Jialin Cai ◽

Jun Liu ◽

Fadhel M. Ghannouchi

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Parameter Extraction ◽

Extraction Technique ◽

High Electron ◽

Small Signal ◽

High Electron Mobility ◽

Electron Mobility Transistors

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