A 37-Gb/s Monolithically Integrated Electro-Optical Transmitter in a Silicon Photonics 250-nm BiCMOS Process

2021 ◽  
pp. 1-1
Author(s):  
Alexandru Giuglea ◽  
Guido Belfiore ◽  
Mohammad Mahdi Khafaji ◽  
Ronny Henker ◽  
Frank Ellinger
Keyword(s):  
Silicon Photonics ◽  
Monolithically Integrated ◽  
Optical Transmitter ◽  
Bicmos Process

A 10-Gb/s optical transmitter module with a monolithically integrated electroabsorption modulator with a DFB laser

1990 ◽  
Vol 2 (12) ◽  
pp. 896-898 ◽  
Author(s):  
M. Goto ◽  
K. Hironishi ◽  
A. Sugata ◽  
K. Mori ◽  
T. Horimatsu ◽  
...  
Keyword(s):  
Electroabsorption Modulator ◽  
Monolithically Integrated ◽  
Optical Transmitter ◽  
Dfb Laser

scholarly journals A BaTiO3-Based Electro-Optic Pockels Modulator Monolithically Integrated on an Advanced Silicon Photonics Platform

2019 ◽  
Vol 37 (5) ◽  
pp. 1456-1462 ◽  
Author(s):  
Felix Eltes ◽  
Christian Mai ◽  
Daniele Caimi ◽  
Marcel Kroh ◽  
Youri Popoff ◽  
...  
Keyword(s):  
Silicon Photonics ◽  
Monolithically Integrated ◽  
Electro Optic

A Monolithically Integrated Silicon Photonics 8×8 Switch in 90nm SOI CMOS

2020 ◽  
Author(s):  
Jonathan E. Proesel ◽  
Nicolas Dupuis ◽  
Herschel Ainspan ◽  
Christian W. Baks ◽  
Fuad Doany ◽  
...  
Keyword(s):  
Silicon Photonics ◽  
Monolithically Integrated ◽  
Integrated Silicon Photonics ◽  
Soi Cmos

scholarly journals Wavelength division multiplexed light source monolithically integrated on a silicon photonics platform

2017 ◽  
Vol 42 (9) ◽  
pp. 1772 ◽  
Author(s):  
Purnawirman ◽  
Nanxi Li ◽  
E. Salih Magden ◽  
Gurpreet Singh ◽  
Michele Moresco ◽  
...  
Keyword(s):  
Light Source ◽  
Silicon Photonics ◽  
Wavelength Division ◽  
Wavelength Division Multiplexed ◽  
Monolithically Integrated

scholarly journals Germanium-based integrated photonics from near- to mid-infrared applications

Nanophotonics ◽  
2018 ◽  
Vol 7 (11) ◽  
pp. 1781-1793 ◽  
Author(s):  
Delphine Marris-Morini ◽  
Vladyslav Vakarin ◽  
Joan Manel Ramirez ◽  
Qiankun Liu ◽  
Andrea Ballabio ◽  
...  
Keyword(s):  
Silicon Photonics ◽  
High Performance ◽  
Optical Sensing ◽  
Building Blocks ◽  
Transparency Window ◽  
Integrated Photonics ◽  
Mid Infrared ◽  
Monolithically Integrated ◽  
Laser Sources

AbstractGermanium (Ge) has played a key role in silicon photonics as an enabling material for datacom applications. Indeed, the unique properties of Ge have been leveraged to develop high performance integrated photodectors, which are now mature devices. Ge is also very useful for the achievement of compact modulators and monolithically integrated laser sources on silicon. Interestingly, research efforts in these domains also put forward the current revolution of mid-IR photonics. Ge and Ge-based alloys also present strong advantages for mid-infrared photonic platform such as the extension of the transparency window for these materials, which can operate at wavelengths beyond 8 μm. Different platforms have been proposed to take benefit from the broad transparency of Ge up to 15 μm, and the main passive building blocks are now being developed. In this review, we will present the most relevant Ge-based platforms reported so far that have led to the demonstration of several passive and active building blocks for mid-IR photonics. Seminal works on mid-IR optical sensing using integrated platforms will also be reviewed.

Monolithically Integrated MESFET Devices on a High-Speed Silicon Photonics Platform

2014 ◽  
Vol 32 (22) ◽  
pp. 4345-4348 ◽  
Author(s):  
Ari Novack ◽  
Ruizhi Shi ◽  
Matt Streshinsky ◽  
Jingcheng Tao ◽  
Kang Tan ◽  
...  
Keyword(s):  
Silicon Photonics ◽  
High Speed ◽  
Monolithically Integrated
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