scholarly journals Low-Loss Buried-Heterostructure Optical Waveguide Based on Impurity-Free-Vacancy-Diffusion Quantum Well Intermixing

2020 ◽  
Vol 12 (2) ◽  
pp. 1-7
Author(s):  
Yang-Jeng Chen ◽  
Rih-You Chen ◽  
Chih-Hsien Chen ◽  
Yu-Hung Lin ◽  
Cong-Long Chen ◽  
...  
2015 ◽  
Vol 644 ◽  
pp. 398-403 ◽  
Author(s):  
Tao Lin ◽  
Haoqing Zhang ◽  
Ruijuan Sun ◽  
Yupeng Duan ◽  
Nan Lin ◽  
...  

2018 ◽  
Vol 47 (3) ◽  
pp. 314003
Author(s):  
王鑫 WANG Xin ◽  
赵懿昊 ZHAO Yi-hao ◽  
朱凌妮 ZHU Ling-ni ◽  
侯继达 HOU Ji-da ◽  
马骁宇 MA Xiao-yu ◽  
...  

1997 ◽  
Vol 33 (10) ◽  
pp. 1784-1793 ◽  
Author(s):  
Boon Siew Ooi ◽  
K. McIlvaney ◽  
M.W. Street ◽  
A.S. Helmy ◽  
S.G. Ayling ◽  
...  

2015 ◽  
Vol 29 ◽  
pp. 150-154 ◽  
Author(s):  
Tao Lin ◽  
Haoqing Zhang ◽  
Hang Sun ◽  
Chen Yang ◽  
Nan Lin

1999 ◽  
Vol 607 ◽  
Author(s):  
A. Saher Helmy ◽  
A.C. Bryce ◽  
C.N. Ironside ◽  
J.S. Aitchison ◽  
J.H. Marsh ◽  
...  

AbstractIn this paper we shall discuss techniques for accurate, non-destructive, optical characterisation of structures fabricated using quantum well intermixing (QWI). Spatially resolved photoluminescence and Raman spectroscopy were used to characterise the lateral bandgap profiles produced by impurity free vacancy disordering (IFVD) technology. Different features were used to examine the spatial resolution of the intermixing process. Features include 1:1 gratings as well as isolated stripes. From the measurements, the spatial selectivity of IFVD could be identified, and was found to be ∼4.5 μm, in contrast with the spatial resolution of the process of sputtering induced intermixing, which was found to be ∼2.5 μm. In addition, PL measurements on 1:1 gratings fabricated using IFVD show almost complete suppression of intermixing dielectric cap gratings with periods less than 10 microns. Finally, some insight into the limitations and merits of PL and Raman for the precision characterisation of QWI will be presented.


1992 ◽  
Vol 262 ◽  
Author(s):  
M. Ghisoni ◽  
A. W. Rivers ◽  
K. Lee ◽  
G. Parry ◽  
X. Zhang ◽  
...  

ABSTRACTIn this paper we shall look at a technique, known as impurity free vacancy diffusion (IFVD) for selectively altering the optoelectronic response of quantum well material after growth with a view to monolithic device integration. We will discuss the mechanism, practical considerations and some possible applications.


1999 ◽  
Vol 38 (Part 2, No. 11B) ◽  
pp. L1303-L1305 ◽  
Author(s):  
Jung Woo Park ◽  
Hyun Soo Kim ◽  
Jung Soo Kim ◽  
Dae Kon Oh ◽  
Kwang Ryong Oh ◽  
...  

1994 ◽  
Vol 30 (2) ◽  
pp. 145-146 ◽  
Author(s):  
I. Gontijo ◽  
J.S. Roberts ◽  
R.M. De La Rue ◽  
J.H. Marsh ◽  
T. Krauss

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