Full Custom MEMS Design: 2.5D Fabrication-Process Simulation for 3D Field-Solver-Based Circuit Extraction

ABSTRACTProcess simulation are performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimise it and to improve the understanding of the dot storage formation. The influence of various parameters (oxidation temperature, nanowire shape) have been investigated.

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Coupled Fabrication Process Simulation and Mechanical Performance Analysis of Microstructures Based on Cellular Automata

2006 5th IEEE Conference on Sensors ◽

10.1109/icsens.2007.355808 ◽

2006 ◽

Author(s):

Zaifa Zhou ◽

Qing-An Huang ◽

Weihua Li ◽

Chi Zhu ◽

Dawei Xu

Keyword(s):

Performance Analysis ◽

Cellular Automata ◽

Process Simulation ◽

Mechanical Performance ◽

Fabrication Process

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Fabrication process simulation and reliability improvement of high-brightness LEDs

Microelectronics Reliability ◽

10.1016/j.microrel.2009.07.028 ◽

2009 ◽

Vol 49 (9-11) ◽

pp. 1244-1249 ◽

Cited By ~ 7

Author(s):

Tsung-Lin Chou ◽

Chien-Fu Huang ◽

Cheng-Nan Han ◽

Shin-Yueh Yang ◽

Kuo-Ning Chiang

Keyword(s):

Process Simulation ◽

Fabrication Process ◽

High Brightness ◽

Reliability Improvement

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Fabrication Process Simulation of a PEM Fuel Cell Catalyst Layer and Its Microscopic Structure Characteristics

Journal of The Electrochemical Society ◽

10.1149/2.064203jes ◽

2012 ◽

Vol 159 (3) ◽

pp. B308-B314 ◽

Cited By ~ 13

Author(s):

Yu Xiao ◽

Meiling Dou ◽

Jinliang Yuan ◽

Ming Hou ◽

Wei Song ◽

...

Keyword(s):

Fuel Cell ◽

Process Simulation ◽

Catalyst Layer ◽

Pem Fuel Cell ◽

Fabrication Process ◽

Microscopic Structure ◽

Structure Characteristics ◽

Fuel Cell Catalyst ◽

Pem Fuel Cell Catalyst

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Fabrication, process simulation and testing of a thick CFRP component using the RTM process

Composites Part B Engineering ◽

10.1016/j.compositesb.2013.08.088 ◽

2014 ◽

Vol 56 ◽

pp. 673-680 ◽

Cited By ~ 35

Author(s):

E. Poodts ◽

G. Minak ◽

L. Mazzocchetti ◽

L. Giorgini

Keyword(s):

Process Simulation ◽

Fabrication Process ◽

Rtm Process

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Linewidth measurement using the low voltage SEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100144681 ◽

1986 ◽

Vol 44 ◽

pp. 652-653

Author(s):

M.G. Rosenfield

Keyword(s):

Electron Microscope ◽

Scanning Electron Microscope ◽

Integrated Circuits ◽

Secondary Electron ◽

Low Voltage ◽

Fabrication Process ◽

Critical Dimensions ◽

Linewidth Measurement ◽

Threshold Technique ◽

Scanning Electron

Minimum feature sizes in experimental integrated circuits are approaching 0.5 μm and below. During the fabrication process it is usually necessary to be able to non-destructively measure the critical dimensions in resist and after the various process steps. This can be accomplished using the low voltage SEM. Submicron linewidth measurement is typically done by manually measuring the SEM micrographs. Since it is desirable to make as many measurements as possible in the shortest period of time, it is important that this technique be automated.Linewidth measurement using the scanning electron microscope is not well understood. The basic intent is to measure the size of a structure from the secondary electron signal generated by that structure. Thus, it is important to understand how the actual dimension of the line being measured relates to the secondary electron signal. Since different features generate different signals, the same method of relating linewidth to signal cannot be used. For example, the peak to peak method may be used to accurately measure the linewidth of an isolated resist line; but, a threshold technique may be required for an isolated space in resist.

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